UTBB FDSOI Devices Featuring 20nm Gate Length
January 10, 2014
Did you go to IEDM 2013 in Washington DC ? You may have attended to the “Advanced CMOS Technology Platform” chaired by TSMC, and listen to the FD-SOI related presentation “High Performance UTBB FDSOI Devices Featuring 20nm Gate Length for 14nm Node and Beyond”. According with the abstract, this paper is the first time report of “high performance Ultra-thin Body and Box (UTBB) FDSOI devices with a gate length (LG) of 20nm and BOX thickness (TBOX) of 25nm, featuring dual channel FETs (Si channel NFET and compressively strained SiGe channel PFET).” If you didn’t go to Washington DC, or not familiar with FD-SOI, having a look at FD-SOI device architecture could help.
To read the full article, click here
Related Semiconductor IP
- Flexible Pixel Processor Video IP
- Complex Digital Up Converter
- Bluetooth Low Energy 6.0 Digital IP
- Verification IP for Ultra Ethernet (UEC)
- MIPI SWI3S Manager Core IP
Related Blogs
- At What Point Does Transistor Gate Length Stop Getting Smaller?
- Samsung 20nm test chip includes ARM Cortex-M0 processor core. How many will fit on the head of a pin?
- 3D Transistors @ TSMC 20nm!
- NVIDIA Claims TSMC 20nm will not Scale?
Latest Blogs
- CNNs and Transformers: Decoding the Titans of AI
- How is RISC-V’s open and customizable design changing embedded systems?
- Imagination GPUs now support Vulkan 1.4 and Android 16
- From "What-If" to "What-Is": Cadence IP Validation for Silicon Platform Success
- Accelerating RTL Design with Agentic AI: A Multi-Agent LLM-Driven Approach