Power Management IP
Power management IPs are indispensable in modern chip design, especially for battery applications where power is constrained and for high-power applications where thermal efficiency is vital. Power management IPs are specialized blocks or circuits that help to control the power consumption, voltage levels and energy efficiency of a system.
Power Management IP, such as Low Drop-Out (LDO) Regulators, Power-On-Reset (POR) Monitors, and the Power Management Unit (PMU) Subsystem, ensure low power consumption with optimal performance.
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Power Management IP
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Power Management IP
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Power and Clock Generation IP - GLOBALFOUNDRIES® 22FDX®
- Tightly integrated power management platform with a soft-IP wrapper around Analog / Mixed-Signal hard macros which generate all supply voltages and clock signals needed to run highly efficient SoCs in GlobalFoundries® 22FDX®.
- Running from only one supply voltage and reference clock, the IP generates its own internal supplies and references, and those needed to run the Racyics® ABX® Generator.
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Energy Harvesting module with AC-DC converter for X-FAB 180nm
- Silicon proven in X-FAB XT018 FD-SOI
- Input frequency: 10Hz to 10kHz
- Power conversion rate: up to 65%
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LDO Voltage Regulator, 250 mA, Adjustable 0.45 V to 0.9 V Output
- TSMC 3nm FinFET process
- Input voltage: 1.2 V
- Output voltage range: 0.45 V to 0.9 V
- Vout adjustable in 50 mV increments
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LDO Voltage Regulator, 30 mA, Adjustable 0.45 V to 0.9 V Output
- TSMC 3nm FinFET process
- Input voltage: 1.2 V
- Output voltage range: 0.45 V to 0.9 V
- Vout adjustable in 50 mV increments
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Reference Generator - Low Power ISR- 330 nA (Typ) - TSMC0.13µm
- This macro-cell is a low power voltage reference and a current generator with precise temperature coefficient.
- Trimming capability allows process variation compensation of the voltage reference level and current TC.
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Linear Low-Dropout Regulator (Output Voltage 0.6V)
- Output Voltage 0.6V
- TSMC12/16nm CMOS FinFET
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Linear Low-Dropout Regulator (Output Voltage 0.9V)
- Output Voltage 0.9V
- TSMC 12/16nm CMOS FinFET
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Bandgap Voltage Reference (0.6V and 0.8V References)
- 0.6V and 0.8V References
- Eight 50uA reference output currents implemented
- TSMC12/16nm CMOS FinFET
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Voltage/Current References - 1.21V ±0.5%, 600nA ±10% - GlobalFoundries 0.13µm Lite
- This macro-cell is a low power voltage-current reference (1.21V / 600nA) with high accuracy (±0.5% over PVT) after trimming.
- Trimming capability allows process variation compensation of the voltage/current reference, including its thermal coefficient.
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Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX
- ABB generator, standard cells, SRAM
- Up to 9X performance
- 75% leakage reduction
