RF IP
RF IP cores enable the integration of radio frequency (RF) communication capabilities into semiconductor systems. These cores handle the generation, amplification, modulation, and demodulation of RF signals, making them essential for applications such as wireless communication, IoT devices, automotive, and 5G networks. RF IP cores support a wide range of standards, including Wi-Fi, Bluetooth, LTE, and 5G, offering high performance, low power consumption, and efficient signal processing.
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RF IP
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194
RF IP
from 21 vendors
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High Bandwidth Differential Output Operational Amplifier
- The WEAOPDHB18PI18RO12M22G is a High Bandwidth two stage differential pmos input Operational Amplifier with common mode feedback pmos source follower driven outputs.
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Programmable Low Pass Filter
- The WEA50175LPF18CH322G is a leapfrog low pass filter with programmable cut-off frequency
- The filter response is 3rd order Chebyschev
- The low pass filter cutoff frequency can be selected from 40 MHz to 175 MHz
- The resistors and the capacitors are programmable (6-bit and 4-bit respectively) and can be calibrated to minimize the low pass cutoff frequency accuracy due to process variation.
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Active Programmable High Pass Filter
- The WEA228HPFA18BT122G is an active High Pass filter with variable frequency and variable gain
- The cutoff frequency can be set from 2 MHz to 27.5 MHz with a residual absolute error less than 9% over process after calibration
- The maximum gain is 16 dB and can be programmed with 2.5 dB steps
- The filter support bypass mode
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76 GHZ to 81 GHz LNA Phase Array
- The WEA7681L130 consists of phase array element of 4 LNAs and a combiner
- Each LNA has 3 stages
- The WEA7681L130 functions as a MUX
- Every LNA stage current is programmable
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GPS/Galileo/GLONASS multisystem single-band receiver
- SMIC RF CMOS 180 nm technology
- Single conversion superheterodyne receiver
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UHF Passive RFID Front-End - EPCGlobal Class 1 Gen 2/ISO18000-6C Compliant
- This macro-cell is an ultra low power analog/RF front-end core designed for SilTerra 0.18μm CMOS technology.
- It is ideal for use in passive UHF RFID integrated circuits compliant with EPCGlobal Class 1 Gen 2 / ISO18000-6C standards.
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1.16 to 1.26 and 1.56 to 1.61 GHz low noise amplifier with 27.5dB gain
- AMS SiGe BiCMOS 0.35um
- Operating frequency range from 1164 to 1257 MHz and 1565 to 1614 MHz
- High gain (28 dB)
- Low noise figure (less than 2 dB)
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CC-100IP-RF Analog and RF Sensitivity Enhancement IP
- Enhances the Sensitivity of Analog and RF Frontend Receivers
- Enhances the PSRR od Analog and RF Frontend Receivers
- Occupies the same on chip area as standard DCAPs with at least a 600X effective capacitance increase
- Up to a 36% Dynamic Power and RF Emissions Reduction
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25 to 500 MHz LNA with 0.8 dB NF and 19 dB gain
- TSMC CMOS 55nm
- Operating frequency range from 25 to 500 MHz
- Low noise figure (0.8 dB)
- Gain control range 19 dB
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500-1750MHz LNA with 1dB NF and 19dB gain
- TSMC CMOS 55nm
- Operating frequency range from 500 to 1750 MHz
- Low noise figure (1 dB)
