Embedded Memories IP

Embedded Memories IP csupport various types of memory, including SRAM, ROM, and Flash, offering fast data access, low latency, and low power consumption for embedded systems.

All offers in Embedded Memories IP
Filter
Filter

Login required.

Sign in

Login required.

Sign in

Login required.

Sign in

Compare 2,200 Embedded Memories IP from 51 vendors (1 - 10)
  • ReRAM NVM in SkyWater 130nm
    • Technology: 130nm, SkyWater S130
    • Mask Adder: 2
    • Supply Voltage: 1.8V Read, 1.8V+3.3/3.6V Program
    • Read Access Time: <20nsec
    • Operation Temp.: -40°C - 125°C (can be extended to -55°C)
    • Capacity: 256 Kbit (can be customized for 128Kbit - 2Mbit)
    • Data Bus Width (Read): 32-bit (can be customized to 16-bit to 128-bit)
    Block Diagram -- ReRAM NVM in SkyWater 130nm
  • Single Rail SRAM GLOBALFOUNDRIES 22FDX
    • Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution.
    • The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.
    Block Diagram -- Single Rail SRAM GLOBALFOUNDRIES 22FDX
  • Dual-Rail SRAM Globalfoundries 22FDX
    • Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
    • Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
    Block Diagram -- Dual-Rail SRAM Globalfoundries 22FDX
  • Embedded CMOS Flash memory IP with sector/chip Erase and byte Program capability
    • SuperFlash technology
    • CMOS compatible
    • Up to 500K cycle endurance
    Block Diagram -- Embedded CMOS Flash memory IP with sector/chip Erase and byte Program capability
  • LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
    • Compliant for JEDEC standards for LPDDR5X/5/4X/4 with PHY standards
    • DFI 5.1 specification PHY Interface Compliant
    • Support up to 4 ranks
    • x16 and x32 channel support
    Block Diagram -- LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
  • LPDDR5X/5/4X/4 combo PHY at 7nm
    • Compliant with JEDEC JESD209-5B for LPDDR5X/5/4X/4 with PHY standards
    • Delivering up to 8533Mbps
    • DFI 5.1 specification PHY Interface Compliant
    • Support up to 4 ranks
    Block Diagram -- LPDDR5X/5/4X/4 combo PHY at 7nm
  • Low Power Memory Compiler - 1-Port Register File Compiler - GF 22nm FDX
    • Specifically designed for ultra-low power applications, this memory leverages body biasing to dramatically reduce power consumption.
    • Compatible with industry Adaptive Body Biasing IP for PVT and aging compensation
    • Body Biasing functionality (up to +1.3V / -1.5V) to reduce leakage or increase speed at the same power
    Block Diagram -- Low Power Memory Compiler - 1-Port Register File Compiler - GF 22nm FDX
  • Low Power Memory Compiler - Single Port SRAM - GF 22nm FDX
    • Silicon proven Single Port SRAM compiler for GF22 FDX - Memory optimized for low power and supports body biasing.
    Block Diagram -- Low Power Memory Compiler -  Single Port SRAM -  GF 22nm FDX
  • Ultra High-Speed Cache Memory Compiler - 2-Port Register File - TSMC N3P
    • The Ultra High-Speed cache memory is an adaptable, independent, non-coherent cache Intellectual Property (IP) featuring an advanced cache architecture.
    • This architecture enhances system performance, scalability, power efficiency, data locality, application responsiveness, cost optimization, and market competitiveness, providing a distinctive business value.
    Block Diagram -- Ultra High-Speed Cache Memory Compiler - 2-Port Register File  - TSMC N3P
  • Low Latency DRAM Synthesizable Transactor
    • Supports 100% of Low Latency DRAM protocol standard Low Latency DRAM specifications
    • Supports 8 internal banks
    • Supports all mode registers programming
    • Supports programmable read latency and row cycle time
    Block Diagram -- Low Latency DRAM Synthesizable Transactor
×
Semiconductor IP