Embedded Memories IP

Compare 2,198 Embedded Memories IP from 49 vendors (1 - 10)

ReRAM NVM in SkyWater 130nm
- Technology: 130nm, SkyWater S130
- Mask Adder: 2
- Supply Voltage: 1.8V Read, 1.8V+3.3/3.6V Program
- Read Access Time: <20nsec
- Operation Temp.: -40°C - 125°C (can be extended to -55°C)
- Capacity: 256 Kbit (can be customized for 128Kbit - 2Mbit)
- Data Bus Width (Read): 32-bit (can be customized to 16-bit to 128-bit)
Single Rail SRAM GLOBALFOUNDRIES 22FDX
- Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution.
- The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.
Dual-Rail SRAM Globalfoundries 22FDX
- Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
- Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
Embedded CMOS Flash memory IP with sector/chip Erase and byte Program capability
- SuperFlash technology
- CMOS compatible
- Up to 500K cycle endurance
LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
- Compliant for JEDEC standards for LPDDR5X/5/4X/4 with PHY standards
- DFI 5.1 specification PHY Interface Compliant
- Support up to 4 ranks
- x16 and x32 channel support
LPDDR5X/5/4X/4 combo PHY at 7nm
- Compliant with JEDEC JESD209-5B for LPDDR5X/5/4X/4 with PHY standards
- Delivering up to 8533Mbps
- DFI 5.1 specification PHY Interface Compliant
- Support up to 4 ranks
Low Power Memory Compiler - 1-Port Register File Compiler - GF 22nm FDX
- Specifically designed for ultra-low power applications, this memory leverages body biasing to dramatically reduce power consumption.
- Compatible with industry Adaptive Body Biasing IP for PVT and aging compensation
- Body Biasing functionality (up to +1.3V / -1.5V) to reduce leakage or increase speed at the same power
Low Power Memory Compiler - Single Port SRAM - GF 22nm FDX
- Silicon proven Single Port SRAM compiler for GF22 FDX - Memory optimized for low power and supports body biasing.
Ultra High-Speed Cache Memory Compiler - 2-Port Register File - TSMC N3P
- The Ultra High-Speed cache memory is an adaptable, independent, non-coherent cache Intellectual Property (IP) featuring an advanced cache architecture.
- This architecture enhances system performance, scalability, power efficiency, data locality, application responsiveness, cost optimization, and market competitiveness, providing a distinctive business value.
Low Latency DRAM Synthesizable Transactor
- Supports 100% of Low Latency DRAM protocol standard Low Latency DRAM specifications
- Supports 8 internal banks
- Supports all mode registers programming
- Supports programmable read latency and row cycle time