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Embedded Memories IP

Embedded Memories IP csupport various types of memory, including SRAM, ROM, and Flash, offering fast data access, low latency, and low power consumption for embedded systems.

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Compare 871 Embedded Memories IP from 43 vendors (1 - 10)
  • Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage - GLOBALFOUNDRIES low-leakage 6T L110 bit cells with High Vt and low leakage periphery to ensure minimal leakage and high yield.  
    • Multi-Bank Architecture - Memory split into 1 to 4 banks for reduced bit line length and enhanced timing. 
    • Ultra Low Power Standby - Built-in source biasing trims standby current to a minimum for data retention. 
    Block Diagram -- Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
  • Dual Port Register File Compiler (1 Read-only port, 1 Write-only port) - GF 22FDX+
    • Uses 8T-TP185SL bit cells. 
    • Isolated Supplies: Periphery and array power domains can be independently powered down in standby mode. 
    • Deep Sleep Standby Mode: Memory retains data at minimal power via internal biasing. 
    Block Diagram -- Dual Port Register File Compiler (1 Read-only port, 1 Write-only port) - GF 22FDX+
  • High Speed Single Port Compiler on TSMC 40nm ULP
    • Low voltage
    • Ultra low power data retention
    • Self biasing
    • Soft error immunity
    Block Diagram -- High Speed Single Port Compiler on TSMC 40nm ULP
  • Single Port Register File Compiler on N22ULL
    • Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance. 
    • Bit Cell: Utilizes Foundry’s 6T bit cells to ensure high manufacturing yields 
    • Deep Sleep Mode Retains data a minimal power consumption.   Dedicated standby mode reduces power required to an absolute minimum to retain the memory contents.  
    Block Diagram -- Single Port Register File Compiler on N22ULL
  • Single Port High Speed SRAM Memory Compiler on N22ULL
    • Ultra low power data retention. Memory instances generated by the Bulk 22ULL go into a deep sleep mode that retains data at minimal power consumption.
    • Self biasing. The SP SRAM 22ULL internal self-biasing capabilities provide ease of IP integration.
    • High yield. To ensure high manufacturing yield, bulk 22ULL uses low leakage 6T (0.110µ2) bit cells and is consistent with Design for Manufacturing (DFM) guidelines for the Bulk 22ULL process.
    • High usability. All signal and power pins are available on metal 4 while maintaining routing porosity in metal 4. Power pins can optionally be made available on metal 5 to simplify the power connections at the chip level.
    Block Diagram -- Single Port High Speed SRAM Memory Compiler on N22ULL
  • Single Port Low Voltage SRAM Memory Compiler on N22ULL - Low Power Retention and Column Repair
    • Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance 
    • Bit Cell: Utilizes Low Leakage 6T bit cells to ensure high manufacturing yields 
    • Ultra Low Power Standby: Internally generated bias voltage for low leakage data retention 
    • Isolated Array and Periphery supplies: Periphery voltage can be shut off to further reduce standby power 
    Block Diagram -- Single Port Low Voltage SRAM Memory Compiler on N22ULL - Low Power Retention and Column Repair
  • Single Port Low Voltage SRAM Memory Compiler on N22ULL
    • Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance 
    • Bit Cell: Utilizes Low Leakage 6T bit cells to ensure high manufacturing yields 
    • Ultra Low Power Standby: Internally generated bias voltage for low leakage data retention 
    Block Diagram -- Single Port Low Voltage SRAM Memory Compiler on N22ULL
  • Dual Port (1 read only port, 1 write only port) Register File Compiler on N22ULL
    • Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance.
    • Bit Cell: Utilizes Foundries  8T bit cells to ensure high manufacturing yields
    • Deep Sleep Mode Retains data a minimal power consumption.
    Block Diagram -- Dual Port (1 read only port, 1 write only port) Register File Compiler on N22ULL
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage  6T (P110UL) bit cells to ensure high manufacturing yields 
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage Register File Compiler - GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage. 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (L110) bit cells to ensure high manufacturing yields.   
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX+
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