IP Catalog > Analog IP > Power Management IP

Power Management IP

Power management IPs are indispensable in modern chip design, especially for battery applications where power is constrained and for high-power applications where thermal efficiency is vital. Power management IPs are specialized blocks or circuits that help to control the power consumption, voltage levels and energy efficiency of a system.

Power Management IP, such as Low Drop-Out (LDO) Regulators, Power-On-Reset (POR) Monitors, and the Power Management Unit (PMU) Subsystem, ensure low power consumption with optimal performance.

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Compare 861 Power Management IP from 56 vendors (1 - 10)
  • Power-On-Reset IP
    • The Power-On-Reset (POR) IP provides reliable reset functions for general applications
    • It is powered by analog supply and monitors both analog and digital supply
    • The POR IP generates a POR signal to reset the digital logic
    Block Diagram -- Power-On-Reset IP
  • Low Noise, High PSRR, Replica LDO
    • The WEALDORP18NI12RRSP22M22G is a voltage regulator operating from 1.8 V voltage supply
    • The WEALDO18NI12SFN12M22G provides one output voltage 1.2 V driving output load that sinks specific current
    Block Diagram -- Low Noise, High PSRR, Replica LDO
  • Low Noise, High PSRR, Replica LDO
    • The WEALDORP1812NI8SFN12M22G is a low-dropout regulator LDO with voltage supplies 1.8 V and 1.2 V
    • The WEALDORP1812NI8SFN12M22G gives one output voltage 1.2 V driving the Power Amplifier
    • The output is programmable to retain the output voltage constant when the load current varies under a wide range.
    Block Diagram -- Low Noise, High PSRR, Replica LDO
  • Low Noise, High PSRR, Replica LDO
    • The WEALDORP1812NI08SFN42M22G is a voltage regulator operating from 1.8 V and 1.2 V power supplies
    • The WEALDORP1812NI08SFN42M22G provides four 0.8 V outputs each one driving output loads
    • Due to poor line regulation the accuracy of the output voltage can be calibrated through a 4 bit binary control when the load current varies under a wide range.
    Block Diagram -- Low Noise, High PSRR, Replica LDO
  • Low Noise, High PSRR, Replica LDO
    • The WEALDORP1812NI08SFN22M22G is a voltage regulator operating from 1.8 V and 1.2 V power supplies
    • The WEALDORP1812NI08SFN22M22G provides two 0.8 V outputs
    • The outA output has double current driving capability compared to outB
    • Due to poor dc-line regulation the accuracy of the output voltage can be calibrated through a 4 bit binary control when the load current varies under a wide range.
    Block Diagram -- Low Noise, High PSRR, Replica LDO
  • Low Noise, High PSRR, Replica LDO
    • The WEALDOLR18NI2SFN42M22G is a voltage regulator operating from 1.8 V
    • It provides four output voltages 1.2 V driving output load that sinks specific current
    • The first two output voltages apply to the VCO, the second drives the OutBuffer and the last one drives the digital circuitry.
    Block Diagram -- Low Noise, High PSRR, Replica LDO
  • Low Noise, High PSRR Replica Voltage Regulator
    • The WEALDO18NI12SFN32M22G is a voltage regulator operating from 1.8 V
    • It provides three output voltages 1.2 V driving output load that sinks specific current
    • The first output voltage applies to the VCO, the second drives the OutBuffer and the last one drives the digital circuitry.
    Block Diagram -- Low Noise, High PSRR Replica Voltage Regulator
  • Bandgap Voltage Reference 500mV/1.14V High Precision
    • The WEA05114BG45G is a high precision band gap reference voltage that provides a 500 mV and a 1.14 V output from inputs between 1.8 V and 3.0 V
    • It is a Bipolar style Bandgap based on SOI Forward Biased Diodes
    • The SOI Diodes are not tied to the substrate, in this way the circuit simultaneously provides PTAT, CTAT and is constant with temperature currents
    • It is specified over the −40°C to +120°C temperature range.
    Block Diagram -- Bandgap Voltage Reference 500mV/1.14V High Precision
  • Ka Band power detector
    • The WEAKA01PD22G is a power detector capable of detecting signals in the range of 3 dBm to 18 dBm with an accuracy of +/-0.5 dB
    • It produces a voltage proportional to the received signal power with the maximum output voltage being 1.1 V
    • It consists of 2 parts, the RF and the Analog processing part
    • Multiplexing can also be used to support multiple RF inputs with minimal impact on the silicon area using the same analog part
    Block Diagram -- Ka Band power detector
  • Bandgap Voltage Reference, 0.45 V Output, Low PPM/°C, TSMC N3P
    • TSMC 3nm FinFET process
    • Input voltage: 1.0 V +/-10%
    • Output voltage: 0.45 V
    • Output voltage variation: < 5 mV at 0°C to 100°C
    Block Diagram -- Bandgap Voltage Reference, 0.45 V Output, Low PPM/°C, TSMC N3P
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