Single Rail SRAM GLOBALFOUNDRIES 22FDX

Overview

Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution. The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.

Key Features

  • Single port SRAM compiler based on Racyics® R188 logic memory cell with dual-well architecture
  • Supply voltage 0.55 V to 0.8 V enabled with Racyics® ABX
  • Direct interfacing to ULV Racyics® ABX digital standard cell domains without additional level shifters
  • Full set of characterization corners for -40 °C to 150 °C temperature range for Racyics® ABX aware timing and power sign-off
  • Full statistical LVF characterization for low voltage operation
  • Production test methodology available for ABB

Block Diagram

Single Rail SRAM GLOBALFOUNDRIES 22FDX Block Diagram

Deliverables

  • Verilog simulation models
  • .libidb timing (NLDM, CCS, LVF) and power models
  • .lef layout abstract views
  • Milkyway database
  • GOSH layouts
  • LVS netlist

Technical Specifications

Foundry, Node
Globalfoundries 22FDX
Maturity
silicon-proven
Availability
now
GLOBALFOUNDRIES
Pre-Silicon: 22nm FDX
Silicon Proven: 22nm FDX
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Semiconductor IP