Analog Front Ends IP

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Compare 74 Analog Front Ends IP from 18 vendors (1 - 10)
  • E-Band Front-End Module 71 GHz to 86 GHz
    • The WEA7186F55 is a front end for wireless microwave transceivers operating in the E-Band
    • Implemented in a ST Micro Silicon Germanium B55 process
    • The WEA7186F55 integrates a LNA path, a Power Amplifier together with Bias and Gain Control blocks.
    Block Diagram -- E-Band Front-End Module 71 GHz to 86 GHz
  • 8-Channel Ultra-Low Power Capacitive Touch Interface
    • The MVCTCH01 ASIC is an ultra-low power and high-sensitivity 8-channel capacitive touch interface that is designed to be easily integrated with capacitive touch pads.
    • Ultra-low power operation is achieved by using a novel capacitive-to-digital converter, making it suitable for battery powered and portable devices.
    Block Diagram -- 8-Channel Ultra-Low Power Capacitive Touch Interface
  • Ultrasound AFE Transceiver Chip for CMUT Transducers
    • The MVUS01 ultrasound transducer interface is the first generation of high-voltage (HV) ultrasound ASICs intended for portable medical imaging probes and other markets.
    • The chip supports pulsing ultrasonic transducers, with excitation voltages of up to 50V, and has high gain and low noise receivers, for increased sensitivity to ultrasonic echoes.
    Block Diagram -- Ultrasound AFE  Transceiver Chip for  CMUT Transducers
  • Digital Capacitive Plus Bridge Sensor Interfaces
    • The MVCBT015 is a programmable, highly accurate, capacitance-to-digital converter and bridge interface that is designed to be easily integrated with capacitive and bridge sensors.
    • The chip features very fast measurement times, low operating power, and very low standby currents, making it very suitable for low power and portable applications.
    Block Diagram -- Digital Capacitive Plus  Bridge Sensor Interfaces
  • Frequency-to-Digital Converter for MEMS Resonators
    • The MVFD01 is a programmable frequency-to-digital converter that is designed to be easily integrated with MEMS resonators.
    • The chip features a versatile low noise amplifier (LNA) with a programmable gain and feedthrough capacitance cancellation, in order to accommodate different MEMS resonators

     

    Block Diagram -- Frequency-to-Digital  Converter for MEMS  Resonators
  • Dual Channel Digital Capacitive Sensor Interface
    • The MVCT018 is a programmable and very accurate capacitance-to-digital converter interface, designed to be easily integrated with capacitive sensors.
    • The chip features very fast measurement times, low operating power, and very low standby currents, making it very suitable for low power and portable applications.
    Block Diagram -- Dual Channel Digital Capacitive Sensor Interface
  • GPS/Galileo/GLONASS multisystem single-band receiver
    • SMIC RF CMOS 180 nm technology
    • Single conversion superheterodyne receiver
    Block Diagram -- GPS/Galileo/GLONASS multisystem single-band receiver
  • UHF Passive RFID Front-End - EPCGlobal Class 1 Gen 2/ISO18000-6C Compliant
    • This macro-cell is an ultra low power analog/RF front-end core designed for SilTerra 0.18μm CMOS technology.
    • It is ideal for use in passive UHF RFID integrated circuits compliant with EPCGlobal Class 1 Gen 2 / ISO18000-6C standards.
    Block Diagram -- UHF Passive RFID Front-End - EPCGlobal Class 1 Gen 2/ISO18000-6C Compliant
  • 1.16 to 1.26 and 1.56 to 1.61 GHz low noise amplifier with 27.5dB gain
    • AMS SiGe BiCMOS 0.35um
    • Operating frequency range from 1164 to 1257 MHz and 1565 to 1614 MHz
    • High gain (28 dB)
    • Low noise figure (less than 2 dB)
    Block Diagram -- 1.16 to 1.26 and 1.56 to 1.61 GHz low noise amplifier with 27.5dB gain
  • Complete measurement subsystem IP for single phase power metering
    • Embedded Computation Engine for utility biling applications
    • Low noise Programmable Gain Amplifier (PGA), to reach the best class accuracy with each type of sensors
    Block Diagram -- Complete measurement subsystem IP for single phase power metering
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