RF IP

RF IP cores enable the integration of radio frequency (RF) communication capabilities into semiconductor systems. These cores handle the generation, amplification, modulation, and demodulation of RF signals, making them essential for applications such as wireless communication, IoT devices, automotive, and 5G networks. RF IP cores support a wide range of standards, including Wi-Fi, Bluetooth, LTE, and 5G, offering high performance, low power consumption, and efficient signal processing.

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Compare 196 RF IP from 22 vendors (1 - 10)
  • Ka-Band (24 − 31GHz) 8-Channel Beamformer
    • NEXUS28Z is a CMOS integrated circuit, implementing highly integrated, mmWave, agile beamforming offering high performance and configurability for target applications.
    • NEXUS28Z delivers a versatile combination of high performance and low power consumption, operating in the frequency range of 24-31GHz. It consists of 8 TX/RX front-ends, which can be split in 2 orthogonal polarizations (4 horizontal and 4 vertical).
    Block Diagram -- Ka-Band (24 − 31GHz) 8-Channel Beamformer
  • Ka-Band (24 - 33GHz) Zero-IF Transceiver
    • The ALTUS28TR is a highly integrated, mmWave, agile transceiver offering high performance and configurability for target applications in an advanced SiGe BiCMOS process technology.
    • This silicon intellectual property (SIP) delivers a versatile combination of high performance and low power consumption.
    Block Diagram -- Ka-Band (24 - 33GHz) Zero-IF Transceiver
  • Ku-Band Phased Array Tx-FE in TSMC 180nm RF
    • The TRV801TSM180RF IP is a Ku-Band (14GHz to 14.5GHz) Transmitter (Tx) in TSMC 180nm RF CMOS process technology.
    • It integrates X+Y transmitter channels on the same die and its low power makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
    Block Diagram -- Ku-Band Phased Array Tx-FE in TSMC 180nm RF
  • Ku-Band Phased Array Rx-FE in TSMC 180nm RF
    • The TRV501TSM180RF IP is a Ku-Band (10.7GHz to 12.75GHz) Receiver (Rx) RFFE TSMC 180nm RF CMOS process technology.
    • It integrates X+Y receiver channels on the same die and its low noise figure and wide baseband bandwidth makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
    Block Diagram -- Ku-Band Phased Array Rx-FE in TSMC 180nm RF
  • Ultra-low power RF receiver / WakeUp receiver
    • Supply current: < 3 uA @ 1.8 V (1 kbit/s)
    • Response time: < 30 ms (1 kbit/s)
    • Sensitivity: -80 dBm
    Block Diagram -- Ultra-low power RF receiver /  WakeUp receiver
  • mmWave 8x8 MIMO RF Front End V1
    • Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
    Block Diagram -- mmWave 8x8 MIMO RF Front End V1
  • mmWave 8x8 MIMO RF Front End V2
    • Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
    Block Diagram -- mmWave 8x8 MIMO RF Front End V2
  • LTE IP
    • Scalable and robust LTE IP for seamless 4G wireless communications integration.
    Block Diagram -- LTE IP
  • High Bandwidth Differential Output Operational Amplifier
    • The WEAOPDHB18PI18RO12M22G is a High Bandwidth two stage differential pmos input Operational Amplifier with common mode feedback pmos source follower driven outputs.
    Block Diagram -- High Bandwidth Differential Output Operational Amplifier
  • Programmable Low Pass Filter
    • The WEA50175LPF18CH322G is a leapfrog low pass filter with programmable cut-off frequency
    • The filter response is 3rd order Chebyschev
    • The low pass filter cutoff frequency can be selected from 40 MHz to 175 MHz
    • The resistors and the capacitors are programmable (6-bit and 4-bit respectively) and can be calibrated to minimize the low pass cutoff frequency accuracy due to process variation.
    Block Diagram -- Programmable Low Pass Filter
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