RF IP

RF IP cores enable the integration of radio frequency (RF) communication capabilities into semiconductor systems. These cores handle the generation, amplification, modulation, and demodulation of RF signals, making them essential for applications such as wireless communication, IoT devices, automotive, and 5G networks. RF IP cores support a wide range of standards, including Wi-Fi, Bluetooth, LTE, and 5G, offering high performance, low power consumption, and efficient signal processing.

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Compare 199 RF IP from 23 vendors (1 - 10)
  • Ku-Band Phased Array Tx-FE in TSMC 180nm RF
    • The TRV801TSM180RF IP is a Ku-Band (14GHz to 14.5GHz) Transmitter (Tx) in TSMC 180nm RF CMOS process technology.
    • It integrates X+Y transmitter channels on the same die and its low power makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
    Block Diagram -- Ku-Band Phased Array Tx-FE in TSMC 180nm RF
  • Ku-Band Phased Array Rx-FE in TSMC 180nm RF
    • The TRV501TSM180RF IP is a Ku-Band (10.7GHz to 12.75GHz) Receiver (Rx) RFFE TSMC 180nm RF CMOS process technology.
    • It integrates X+Y receiver channels on the same die and its low noise figure and wide baseband bandwidth makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
    Block Diagram -- Ku-Band Phased Array Rx-FE in TSMC 180nm RF
  • Ultra-low power RF receiver / WakeUp receiver
    • Supply current: < 3 uA @ 1.8 V (1 kbit/s)
    • Response time: < 30 ms (1 kbit/s)
    • Sensitivity: -80 dBm
    Block Diagram -- Ultra-low power RF receiver /  WakeUp receiver
  • mmWave 8x8 MIMO RF Front End V1
    • Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
    Block Diagram -- mmWave 8x8 MIMO RF Front End V1
  • mmWave 8x8 MIMO RF Front End V2
    • Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
    Block Diagram -- mmWave 8x8 MIMO RF Front End V2
  • LTE IP
    • Scalable and robust LTE IP for seamless 4G wireless communications integration.
    Block Diagram -- LTE IP
  • High Bandwidth Differential Output Operational Amplifier
    • The WEAOPDHB18PI18RO12M22G is a High Bandwidth two stage differential pmos input Operational Amplifier with common mode feedback pmos source follower driven outputs.
    Block Diagram -- High Bandwidth Differential Output Operational Amplifier
  • Programmable Low Pass Filter
    • The WEA50175LPF18CH322G is a leapfrog low pass filter with programmable cut-off frequency
    • The filter response is 3rd order Chebyschev
    • The low pass filter cutoff frequency can be selected from 40 MHz to 175 MHz
    • The resistors and the capacitors are programmable (6-bit and 4-bit respectively) and can be calibrated to minimize the low pass cutoff frequency accuracy due to process variation.
    Block Diagram -- Programmable Low Pass Filter
  • Active Programmable High Pass Filter
    • The WEA228HPFA18BT122G is an active High Pass filter with variable frequency and variable gain
    • The cutoff frequency can be set from 2 MHz to 27.5 MHz with a residual absolute error less than 9% over process after calibration
    • The maximum gain is 16 dB and can be programmed with 2.5 dB steps
    • The filter support bypass mode
    Block Diagram -- Active Programmable High Pass Filter
  • 76 GHZ to 81 GHz LNA Phase Array
    • The WEA7681L130 consists of phase array element of 4 LNAs and a combiner
    • Each LNA has 3 stages
    • The WEA7681L130 functions as a MUX
    • Every LNA stage current is programmable
    Block Diagram -- 76 GHZ to 81 GHz LNA Phase Array
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