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I/O Library IP

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Compare 1,229 I/O Library IP from 50 vendors (1 - 10)
  • Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
    • This Library, developed on SkyWater 90nm CMOS, delivers a radiation-hardened suite of robust interfaces covering general-purpose, open-drain, and high-speed differential signaling needs.
    • The GPIO provides reliable 3.3V digital I/O up to 150 MHz with JESD8C.01 compliance, built-in pull-ups/downs, and 2 kV HBM protection.
    Block Diagram -- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
  • 1.8V/3.3V GPIO With I2C Compliant ODIO in GF 55nm
    • This I/O Library, developed on GlobalFoundries 55nm CMOS, delivers a complete suite of digital and analog I/O solutions with robust 2 kV HBM / 500 V CDM ESD protection and latch-up immunity.
    • The library includes 1.8/3.3 V GPIOs supporting GMII and LVCMOS standards, I2C-compliant ODIOs, and flexible analog I/Os (ANA/DANA) with integrated ESD.
    Block Diagram -- 1.8V/3.3V GPIO With I2C Compliant ODIO in GF 55nm
  • Block Diagram -- 5V FSGPIO, 5V GPIO, 5V GPI, 5V ODIOy in DB HiTek 130nm
  • 0.9V SLVS Transceiver in TSMC 22nm
    • This SLVS I/O Library, implemented in TSMC 22nm with an 11P7M_5X1Z UT-AlRDL metal stack, provides a 0.9V differential transceiver optimized for low-power, high-speed operation.
    • Supporting data rates up to 200 Mbps and compliant with JESD8-13 SLVS standards, the library features strong power supply rejection, integrated 100 on-die termination, and robust 2 kV HBM / 500 V CDM ESD protection.
    Block Diagram -- 0.9V SLVS Transceiver in TSMC 22nm
  • 1.2V SLVS Transceiver in UMC 110nm
    • This library delivers a compact and reliable 1.2V SLVS transceiver solution in UMC 110nm, optimized for high-speed, low-power applications.
    • Featuring robust supply and ground noise rejection, 2kV HBM ESD protection, and integrated on die termination, this library provides both transmit and receive paths compliant with JESD8-13 SLVS standards at up to 200 Mbps.
    Block Diagram -- 1.2V SLVS Transceiver in UMC 110nm
  • SLVS Transceiver in TSMC 28nm
    • This 1.8V SLVS transceiver is a high-performance, low-power I/O solution optimized for TSMCs 28nm process.
    • Designed with 1.8V thick oxide devices and a standard low-voltage core interface at 0.8V, this transceiver ensures robust operation across a wide temperature range (-40°C to 125°C).
    • Supporting high-speed differential signaling up to 2Gbps, it delivers ex- ceptional signal integrity with low jitter and precise eye diagrams.
    Block Diagram -- SLVS Transceiver in TSMC 28nm
  • IO Library - GLOBALFOUNDRIES 22FDX
    • Library contains approx. 60 IO cells
    • Support for all metal-stacks of 22FDX®
    • Low voltage cells with nominal core voltages down to 0.4 V for glue-less interfacing to ULV Racyics® ABX digital standard cell domains
    • Low leakage cells for ultra low power always-on domain usage
    Block Diagram -- IO Library - GLOBALFOUNDRIES 22FDX
  • 1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
    • The 1.2V Thin Gate GPIO is an IP macro for on-chip integration. It is a 1.2V general purpose I/O that does not rely on thick-gate devices. Only thin-gate, 0.9V capable core MOS devices are used in the design.
    • Supported features include core isolation, programmable slew rate compensation, programmable drive strength, input/output enable, pull select and pull enable. Extra features such as programmable hysteresis can be supported upon request.
    Block Diagram -- 1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
  • 3.3V Capable GPIO on TSMC 28nm RF HPC+
    • The 3.3V capable GPIO is an IP macro for on-chip integration. It is a 3.3V general purpose I/O built with a stack of 1.8V thick oxide MOS devices. It is controlled by 0.9V (core) signals.
    • Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
    Block Diagram -- 3.3V Capable GPIO on TSMC 28nm RF HPC+
  • 1.8V Capable GPIO on Samsung Foundry 4nm FinFET
    • The 1.8V capable GPIO is an IP macro for on-chip integration. It is a 1.8V general purpose I/O built with a stack of 1.2V MOS FINFET devices. It is controlled by 0.75V (core) signals.
    • Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
    Block Diagram -- 1.8V Capable GPIO on Samsung Foundry 4nm FinFET
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