LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm .
G1 is best fit embedded flash IP to BCD nodes and it can support from medium density to 100KBytes, from consumer grade to automotive grade.
G1 achieves data retention of 10 years @ 125 degree C ~ 150 degree C, after 10K P/E cycling.
G1 will not affect PDK so it allows the re-use of other existing IPs and the adoption of G1 process module does not change the characteristics of the logic transistors and SPICE model.
Embedded flash IP, 1.5V/5V 130BCD Plus
Overview
Deliverables
- Data Sheet
- Verilog
- Synopsys Model
- GDS
- Test Methodology
Technical Specifications
Foundry, Node
130BCD Plus Process
Maturity
silicon proven, under qualification
Availability
Q4, 2021
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