Dual-Rail SRAM Globalfoundries 22FDX

Overview

Ultra-low voltage logic designs utilizing adaptive body biasing demand for dense SRAM solutions which fully integrates in the ABB aware implementation and sign-off flow of the Racyics® ABX platform solution. The Racyics® dual-rail SRAM supports ultra-low voltage core logic operation down to 0.40V while operating dense, low leakage standard bit cells from a 0.80V memory supply.

Key Features

Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABX
Direct interfacing to ULV Racyics® ABX digital standard cell domains without additional level shifters
Fullset of characterization corners for -40°C to 125°C temperature range for Racyics® ABB aware timing and power sign-off
Full statistical LVF characterization for low voltage operation
Production test methodology available for ABB

Block Diagram

Deliverables

Verilog simulation models
.libidb timing (NLDM, CCS, LVF) and power models
.lef layout abstract views
Milkyway database
GOSH layouts
LVS netlist

Technical Specifications

Foundry, Node

Globalfoundries 22FDX

Maturity

silicon-proven

Availability

now

GLOBALFOUNDRIES

Pre-Silicon: 22nm FDX
Silicon Proven: 22nm FDX

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