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Memory & Libraries IP

Welcome to the ultimate Memory & Libraries IP hub! Explore our vast directory of Memory & Libraries IP.

Memory & Libraries IP cores include a large listing of memory compilers, non-volatile memory (NVM), logic libraries, and IO solutions.

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Search (4,307)
Compare 4,307 Memory & Libraries IP from 84 vendors (1 - 10)
  • 0.9V SLVS Transceiver in TSMC 22nm
    • This SLVS I/O Library, implemented in TSMC 22nm with an 11P7M_5X1Z UT-AlRDL metal stack, provides a 0.9V differential transceiver optimized for low-power, high-speed operation.
    • Supporting data rates up to 200 Mbps and compliant with JESD8-13 SLVS standards, the library features strong power supply rejection, integrated 100 on-die termination, and robust 2 kV HBM / 500 V CDM ESD protection.
    Block Diagram -- 0.9V SLVS Transceiver in TSMC 22nm
  • 1.2V SLVS Transceiver in UMC 110nm
    • This library delivers a compact and reliable 1.2V SLVS transceiver solution in UMC 110nm, optimized for high-speed, low-power applications.
    • Featuring robust supply and ground noise rejection, 2kV HBM ESD protection, and integrated on die termination, this library provides both transmit and receive paths compliant with JESD8-13 SLVS standards at up to 200 Mbps.
    Block Diagram -- 1.2V SLVS Transceiver in UMC 110nm
  • IO Library - GLOBALFOUNDRIES 22FDX
    • Library contains approx. 60 IO cells
    • Support for all metal-stacks of 22FDX®
    • Low voltage cells with nominal core voltages down to 0.4 V for glue-less interfacing to ULV Racyics® ABX digital standard cell domains
    • Low leakage cells for ultra low power always-on domain usage
    Block Diagram -- IO Library - GLOBALFOUNDRIES 22FDX
  • Single Rail SRAM GLOBALFOUNDRIES 22FDX
    • Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution.
    • The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.
    Block Diagram -- Single Rail SRAM GLOBALFOUNDRIES 22FDX
  • Dual Rail SRAM Globalfoundries 22FDX
    • Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
    • Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
    Block Diagram -- Dual Rail SRAM Globalfoundries 22FDX
  • 1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
    • The 1.2V Thin Gate GPIO is an IP macro for on-chip integration. It is a 1.2V general purpose I/O that does not rely on thick-gate devices. Only thin-gate, 0.9V capable core MOS devices are used in the design.
    • Supported features include core isolation, programmable slew rate compensation, programmable drive strength, input/output enable, pull select and pull enable. Extra features such as programmable hysteresis can be supported upon request.
    Block Diagram -- 1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
  • 3.3V Capable GPIO on TSMC 28nm RF HPC+
    • The 3.3V capable GPIO is an IP macro for on-chip integration. It is a 3.3V general purpose I/O built with a stack of 1.8V thick oxide MOS devices. It is controlled by 0.9V (core) signals.
    • Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
    Block Diagram -- 3.3V Capable GPIO on TSMC 28nm RF HPC+
  • 1.8V Capable GPIO on Samsung Foundry 4nm FinFET
    • The 1.8V capable GPIO is an IP macro for on-chip integration. It is a 1.8V general purpose I/O built with a stack of 1.2V MOS FINFET devices. It is controlled by 0.75V (core) signals.
    • Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
    Block Diagram -- 1.8V Capable GPIO on Samsung Foundry 4nm FinFET
  • Flipchip 1.8V/3.3V I/O Library with ESD-hardened GPIOs in TSMC 12nm FFC/FFC+
    • A 1.8V/3.3V flip-chip I/O library with ESD-immune GPIOs and integrated POC circuitry in TSMC FFC/FFC+.
    • This library is a production-ready I/O library built on the TSMC 12nm process. The library features 1.8V to 3.3V GPIOs with programmable drive strength, hysteresis, and control logic.
    Block Diagram -- Flipchip 1.8V/3.3V I/O Library with ESD-hardened GPIOs in TSMC 12nm FFC/FFC+
  • LVDS IO handling data rate up to 50Mbps with maximum loading 60pF
    • KA16UGLVDS01ST001 is a LVDS IO handling data rate up to 50Mbps with a maximum loading of 60pF.
    • The differential voltage swing can be programmable from 0.35V to 1V.
    • The output enable control function can be activated to decide the IO as input/output function. This IP also includes the IO PAD.
    Block Diagram -- LVDS IO handling data rate up to 50Mbps with maximum loading 60pF
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