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RAM IP for TSMC

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Compare 86 RAM IP for TSMC from 9 vendors (1 - 10)
  • Ultra Low Power Embedded SRAM - TSMC 22ULL
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
    • Configurable mux factor sets column length and overall aspect ratio
    • Bit Line Voltage control eliminates potential low operating voltages issues
    Block Diagram -- Ultra Low Power Embedded SRAM - TSMC 22ULL
  • Ultra Low Voltage Embedded SRAM - TSMC 22ULL
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
    • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
    • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
    Block Diagram -- Ultra Low Voltage Embedded SRAM - TSMC 22ULL
  • Ultra Low Power Embedded SRAM - TSMC 28HPC+
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
    • Configurable mux factor sets column length and overall aspect ratio
    • Bit Line Voltage control eliminates potential low operating voltages issues
    Block Diagram -- Ultra Low Power Embedded SRAM - TSMC 28HPC+
  • Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
    • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
    • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
    Block Diagram -- Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
  • Ultra Low Voltage Embedded SRAM - TSMC 40ULP
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
    • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
    • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
    Block Diagram -- Ultra Low Voltage Embedded SRAM - TSMC 40ULP
  • High-Density eMRAM Compiler TSMC 22ULL
    • eMRAM compiler enabling low-power designs requiring high memory capacity
  • TSMC CLN5FF High Density Single Port SRAM Compiler
    • The High Density Single Port SRAM operates within voltage range from 0.675 V to 0.825 V and junction temperature range from -40 °C to 125 °C. The available supported macro size is configurable from 512 bits to 576K bits. The Compiler is divided into 1 groups according to their column selection numbers (Mux=8).
    • ? Pins and metal layers
    • – 1P3M (1X_h_1Xb_v): 3 metal layers used and top metal is MXb.
    • – Power mesh supported with M3 pins
  • TSMC 0.15umLV Single-Port/Dual-Port SRAM, Single-Port/Two-Port Register File and Diffusion ROM Compiler
    • High Density
    • High Speed
    • Size Sensitive Self-Time Delay for Fast Access
    • Automatic Power Down
  • Low power, high speed, and high density configurable Double Density SRAM
    • Based on patent-pending 1T cell design
    • Implemented with unmodified standard CMOS logic process
    • Best-in-class active power, leakage current, density, and speed
    • Supports large instances (e.g. 32Mbit)
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