Embedded Memories IP for TSMC

Compare 71 Embedded Memories IP for TSMC from 13 vendors (1 - 10)

Embedded flash IP, 1.8V/5V TSMC 180nmBCD
- Supports high temperature and long retention life time for severe automotive requirement
- Low power in Program/Erase operation for power critical applications
- Requires few (2~3) additional masks
- No change to SPICE model of Standard CMOS process, for re-using existing design and IP
Ultra Low Power Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
Ultra Low Voltage Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
Ultra Low Power Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
Ultra Low Voltage Embedded SRAM - TSMC 40ULP
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
eTCAM (Embedded Ternary Content Addressable Memory IP
- One cycle operation latency (without priority encoder)
- Valid Bit per entry to reduce power
- Valid Bit reset in one cycle support
- Mask input option for bit-write and masked search key
eTCAM (Embedded Ternary Content Addressable Memory IP
- One cycle operation latency (without priority encoder)
- Valid Bit per entry to reduce power
- Valid Bit reset in one cycle support
sROMet compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 1M
- Foundry sponsored - sROMet compiler - TSMC 55 nm uLPeFlash - Non volatile memory optimized for high density and low power - Dual Voltage - compiler range up to 1M
sROMet compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 1M
- REDUCE DIE COST
- Via 1 programmable ROM
- Key patent for high density with a single programming layer
- Gain in density over alternative ROM designs