Ultra Low Voltage Embedded SRAM - TSMC 40ULP

Overview

EverOnTM is the ‘Always On’ solution for ‘ultra-low power designs with a wide operating voltage range. EverOn provides read/write access down to the bit cell retention voltage, 0.6V in 40ULP and 22ULL, and 0.63V in 28HPC+ process nodes. It delivers up to 70% dynamic power savings and up to 60% static/leakage power savings compared to foundry and other SRAM solutions.

sureCore provides best-in-class power savings by augmenting standard foundry memory 6T bit cells with its innovative, patented architecture, powerful compiler technology and a set of finely grained sleep modes. Product development includes the implementation and execution of a comprehensive verification and characterization strategy.

Detailed datasheets spell out power, performance and timing data covering all process corners across a wide operating voltage range. The full industrial temperature range of -40C to 125C is supported.

Key Features

  • Single port, single voltage rail synchronous SRAM
  • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
  • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
  • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
  • SVT Periphery – enables higher performance at low operating voltages
  • Configurable global data mux sets column length and overall aspect ratio
  • Programmable sleep modes: Light Sleep, Deep Sleep (data retention), Shutdown, configurable on an individual bank basis, up to 4 banks supported
  • Configurable word length from 16 to 72-bits
  • 576Kbit max instance size. Configurable – 8KX72, 16Kx36
  • APTG and BIST support
  • Supports industry standard EDA design flows
  • Operating voltage down to the bit cell retention voltage

Benefits

  • Wide operating voltage range: 0.6V – 1.2V
  • Up to 70% dynamic power saving
  • Up to 60% leakage power saving
  • Advanced sleep modes on independent banks
  • Up to 250MHz performance in 28nm at 0.7V 

Block Diagram

Ultra Low Voltage Embedded SRAM - TSMC 40ULP Block Diagram

Applications

  •  IoT – ‘fit and forget’, low voltage, low standby power
  •  AI Edge – tightly-coupled memory
  •  Wearables, Medical – low voltage, ultra-low power

Technical Specifications

Foundry, Node
TSMC 40 ULP
Maturity
Silicon proven
TSMC
Silicon Proven: 40nm LP
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Semiconductor IP