Tsinghua to Build $30 Billion Memory Fab in China
Dylan McGrath, EETimes
1/20/2017 01:50 AM EST
SAN FRANCISCO—China’s state-controlled chip vendor Tsinghua Unigroup Ltd. announced plans to build a $30 billion memory chip in Nanjing, a city in eastern China.
Tsinghua, which has acquired several chip vendors and facilities over the past few years, is also building a $24 billion memory fab in the Chinese city of Wuhan, announced last March.
Tsinghua said it plans to build DRAM and 3D NAND flash at the Nanjing fab. The first phase of the project will cost about $10 billion and result in the production capacity to produce 100,000 wafers per month, the company said. No timetable was provided for the project.
In 2015, Tsingua made an unsuccessful bid to acquire U.S. memory chip vendor Micron Technology Inc. for $23 billion.
To read the full article, click here
Related Semiconductor IP
- NFC wireless interface supporting ISO14443 A and B with EEPROM on SMIC 180nm
- DDR5 MRDIMM PHY and Controller
- RVA23, Multi-cluster, Hypervisor and Android
- CXL 3.0 Controller
- ECC7 Elliptic Curve Processor for Prime NIST Curves
Related News
- Foxconn Reportedly Readies Chip Fab in China
- CEO interview: Paul Wells of SureCore on low power memory and China
- Exec tried to set up copy-cat Samsung fab in China
- Korean prosecutors name ex-Samsung exec who tried to set up copy-cat fab in China and the Taiwanese backer
Latest News
- AIStorm and DB HiTek Debut SpectroMic™ KWS—an 18uA Always-on Keyword-Spotting Solution Enabling IoT AI Voice Interaction
- SignatureIP Unveils Industry-Leading CXL 3.2 Solution for High-Performance Computing
- Synopsys and Ansys Provide Update Regarding Expected Timing of Acquisition Close
- CAST Releases First Dual LZ4 and Snappy Lossless Data Compression IP Core
- Arteris Wins “AI Engineering Innovation Award” at the 2025 AI Breakthrough Awards