IBM, Samsung Unveil VTFET to Extend Moore's Law
By Stefani Munoz, EETimes (December 14, 2021)
IBM and Samsung Electronics claimed a breakthrough in semiconductor design based on a new IBM’s architecture touted as enabling an 85-percent reduction in power consumption.
The partners said the Vertical Transport Field-Effect Transistors (VTFET) scheme offers greater power efficiency over FinFET designs, potentially extending Moore’s Law scaling beyond current two-dimensional nanosheet thresholds.
FinFETs are generally designed to lie flat atop a wafer to allow electric currents to flow horizontally. Compared to a planar transistor, FinFETs help reduce power leakage while providing greater device density.
Unlike FinFETs, the companies said VTFETs are situated perpendicular to a chip substrate, allowing electric currents to flow vertically. The companies claim the design could, for example, extend smartphone battery life beyond a week without requiring a charge, according to IBM’s blog post.
To read the full article, click here
Related Semiconductor IP
- LPDDR6/5X/5 PHY V2 - Intel 18A-P
- MIPI SoundWire I3S Peripheral IP
- LPDDR6/5X/5 Controller IP
- Post-Quantum ML-KEM IP Core
- MIPI SoundWire I3S Manager IP
Related News
- Moore Microprocessor Portfolio (MMP) Inventor Files Lawsuit against TPL Group
- Moore's Law could enter the fourth dimension--via the third
- Moore's Law threatened by lithography woes
- Broadcom: Time to prepare for the end of Moore's Law
Latest News
- SEALSQ and IC’Alps Unify Expertise to Deliver Integrated Post-Quantum Cybersecurity and Functional Safety for Autonomous Vehicles
- PUFsecurity’s PUFrt Anchors the Security of Silicon Labs’ SoC to Achieve the Industry’s First PSA Certified Level 4
- The next RISC-V processor frontier: AI
- PQShield joins EU-funded FORTRESS Project: Pioneering Quantum-Safe Secure Boot for Europe’s Digital Future
- PQSecure Achieves NIST CAVP Validation