Secure Thingz 和 Intrinsic ID 联手合作，确保嵌入式行业信任方案供应问题
By Stefani Munoz, EETimes (December 14, 2021)
IBM and Samsung Electronics claimed a breakthrough in semiconductor design based on a new IBM’s architecture touted as enabling an 85-percent reduction in power consumption.
The partners said the Vertical Transport Field-Effect Transistors (VTFET) scheme offers greater power efficiency over FinFET designs, potentially extending Moore’s Law scaling beyond current two-dimensional nanosheet thresholds.
FinFETs are generally designed to lie flat atop a wafer to allow electric currents to flow horizontally. Compared to a planar transistor, FinFETs help reduce power leakage while providing greater device density.
Unlike FinFETs, the companies said VTFETs are situated perpendicular to a chip substrate, allowing electric currents to flow vertically. The companies claim the design could, for example, extend smartphone battery life beyond a week without requiring a charge, according to IBM’s blog post.
Related Semiconductor IP
- AES GCM IP Core
- High Speed Ethernet Quad 10G to 100G PCS
- High Speed Ethernet Gen-2 Quad 100G PCS IP
- High Speed Ethernet 4/2/1-Lane 100G PCS
- High Speed Ethernet 2/4/8-Lane 200G/400G PCS
Related News
- 全新EUV光刻设备有望摩尔定律再运行 10 年
- GlobalFoundries对IBM提起诉讼以保护其知识产权和商业秘密
- Xilinx 与IBM 通过 SuperVessel OpenPOWER 开发云平台实现 FPGA 加速
- Xilinx 和 IBM 采用最新 PCI Express 标准， 率先将加速云计算的互联性能提升一倍