EEPROM IP

The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(pages)) with single-bit output data and parallel write data in one word.
Write EEPROM page data comes to input di<15:0> and write process execute if signal wr=“1”.

The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1024 bits (16(bit per word) x 2(word per page) x 32(page)), which is organized as 32 pages of 2 words by 16 bit with single-bit output data and parallel write data.
Data writing in EEPROM consists of 2 phases - erasing and writing.

The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 512 bits (16(bit per word) x 2(word per page) x 16(page)), which is organized as 16 pages of 2 words by 16 bit with single-bit output data and parallel write data.
Write EEPROM page data comes to input D0<15:0> and write by words to latch through the signal SAMPLE, while the signal write in a state of «1». The address of a word written down in latches is defined by two low bits of the bus adr_bl<1:0>.

SMIC EEPROM CMOS 0.18 um
High density of memory cells
Writing and erasing data by one high-voltage pulse
Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)

Global Foundries Embedded EEPROM 0.13 um
1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
High density of memory cells
Writing and erasing data by one high-voltage pulse

GlobalFoundries Embedded EEPROM 0.13 um
2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit