EEPROM IP
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SPI/EEPROM Verification IP
- Follows EEPROM basic specification as defined in Atmel AT25128A,AT25256A
- EEPROM and Saifun SA25C020 EEPROM
- Supports SPI Modes 0 (0,0) and 3 (1,1)
- Supports 64-byte Page Mode and Byte Write Operation
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512bit EEPROM IP with configuration 16p2w16bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
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1Kbyte EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)
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1024-bit EEPROM IP with configuration 32p2w16bit
- SMIC EEPROM CMOS 0.18 um
- 1024-bite of available memory 16(bit per word) x 2(words per page) x 32(pages) bit
- High density of memory cells
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1Kbyte Embedded EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
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512-bit EEPROM with configuration 16p1w32bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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1Kbyte EEPROM (NTLab)
- SMIC EEPROM CMOS 0.18 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
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512-bit EEPROM (NTLab)
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms
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1KByte EEPROM IP with configuration 66p16w8bit
- Global Foundries Embedded EEPROM 0.13 um
- 1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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2048bits EEPROM with configuration 16p8w16bit
- GlobalFoundries Embedded EEPROM 0.13 um
- 2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit
