180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM)
with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64(pages)) with single-bit output data and parallel write data in one word.
Write EEPROM page data comes to input DI<15:0> and write process execute if signal WRITE = “1”.
Data DI<15:0>, page address ADR_P <5:0>, word address in page ADR_W <2:0> cannot be changed until the end of the writing process. Data reading is carried out by specifying the page address ADR_P <5:0> and the address of the word in the page ADR_W <2:0>, as well as the reading bit in the word ADR_B <3:0>. After applying the reading strobe, the DO signal is set at the output corresponding to the reading data from the corresponding addresses of the EEPROM cell. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.
1Kbyte EEPROM with configuration 64p8w16bit
Overview
Key Features
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)
- Data retention over 10 years (endurance 105 cycles, determined by SMIC technology)
- Low power dissipation in standby and active mode
- Internally organized 16(bit per word) x 8(word per page) x 64(page) bit
Applications
- Access control systems
- Radio-frequency identification systems, smart cards
- Electronic devices with battery power
- Chip serial ID and chip safety
- Electronic tags UHF band
Deliverables
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Technical Specifications
Foundry, Node
SMIC EEPROM CMOS 180 nm
Maturity
silicon proven
Availability
Now
SMIC
Silicon Proven:
180nm
EEPROM
Related IPs
- 1Kbyte Embedded EEPROM with configuration 64p8w16bit
- 1Kbyte EEPROM IP with configuration 64p8w16bit
- 1KByte EEPROM IP with configuration 66p16w8bit
- 28nm Wirebond IO library with dynamically switchable 1.8V/ 3.3V GPIO, 5V I2C open-drain, 1.8V & 3.3V analog, OTP program cell, and HDMI & LVDS protection macros - featured across a variety of metal stack and pad configuration options
- 512-bit EEPROM with configuration 16p1w32bit
- 3.6Kbit EEPROM IP with configuration 28p8w16bit