Manufacturing RRAM: Challenges & Opportunities
Non-volatile resistive random access memory (RRAM), widely considered by analysts and other leading experts to be the most viable alternative to NAND, offers clear advantages in cost, manufacturability, and gains in overall system performance. There is no question that current NAND technology has hit its scaling limits at the 1Y node. While 3D-NAND is considered to be the next alternative to NAND by enabling continuous cost reduction and scaling, the technology suffers from cell performance issues and poor on/off ratios, resulting in increased system complexity.
Challenges
In order for a technology to succeed in a 3D architecture, it must deliver a significant increase in density, with a lower cost per bit compared to current Flash solutions, and it must accomplish this with a cell that performs better than existing cells. If these two requirements are not met, a 3D memory will fail to meet the capacity, density, and cost expectations of customers designing next-generation products.
To read the full article, click here
Related Semiconductor IP
- UCIe Chiplet PHY & Controller
- MIPI D-PHY1.2 CSI/DSI TX and RX
- Low-Power ISP
- eMMC/SD/SDIO Combo IP
- DP/eDP
Related Blogs
- Navigating Challenges and Embracing Opportunities in 2024
- Flash Forward: MRAM and RRAM Bring Embedded Memory and Applications into the Future
- Randomization considerations for PCIe Integrity and Data Encryption Verification Challenges
- The Challenges of Video on Smart Mobile Devices
Latest Blogs
- Cadence Unveils the Industry’s First eUSB2V2 IP Solutions
- Half of the Compute Shipped to Top Hyperscalers in 2025 will be Arm-based
- Industry's First Verification IP for Display Port Automotive Extensions (DP AE)
- IMG DXT GPU: A Game-Changer for Gaming Smartphones
- Rivos and Canonical partner to deliver scalable RISC-V solutions in Data Centers and enable an enterprise-grade Ubuntu experience across Rivos platforms