Ultra-low power sram IP

SureCore has exploited its low power design capability to create a new range of ultra-low voltage, SRAM solutions, called PowerMiser^™ Plus.
Based on the market-leading, low dynamic power PowerMiser architecture, this dual rail product family can interface down to 0.45V, enabling customers to create innovative, low power products.

Ultra low power data retention. Memory instances generated by the Bulk 40 ULPgo into a deep sleep mode that retains data at minimal power consumption.

Ultra low power data retention. Memory instances generated by the Bulk 22ULL go into a deep sleep mode that retains data at minimal power consumption.
Self biasing. The SP SRAM 22ULL internal self-biasing capabilities provide ease of IP integration.
High yield. To ensure high manufacturing yield, bulk 22ULL uses low leakage 6T (0.110µ2) bit cells and is consistent with Design for Manufacturing (DFM) guidelines for the Bulk 22ULL process.
High usability. All signal and power pins are available on metal 4 while maintaining routing porosity in metal 4. Power pins can optionally be made available on metal 5 to simplify the power connections at the chip level.

Silicon proven Single Port SRAM compiler for GF22 FDX - Memory optimized for low power and supports body biasing.

Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution.
The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.

Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB

32bit proprietary MCU: Better power performance then ARM M0 with max speed of 48Mhz
Memory: Program memory: 512kB Flash, 64kB on-chip SRAM with up to 32kB retention
RF transceiver: BLE 5.1 Compliant, 1Mbps, 2Mbps, Long Range 125kbps and 500kbps Or 2.4GHz proprietary 1Mbps/2Mbps/250kbps/500kbps mode with Adaptive
Frequency Hopping feature or 15.4 compliant, 250kbps

With the advent of mobile and handheld electronic devices, the demand for much smaller, faster and ultra-low power systems keeps growing. Yet to meet such needs, the microelectronics industry cannot rely anymore on following Moore’s law like it has for the last decades.
Embedded memories, which represent a major part of the circuits silicon area have now become a major contributor to power dissipation in integrated system circuits. To solve these issues, several technologies are intensively investigated to replace existing embedded memories (SRAM and Flash).
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been chosen by the industry as the non-volatile memory technology of choice to replace Embedded Flash at advanced technology nodes.

ultra-low power SRAM IP