Single Port SRAM with low power retention mode, high speed pins on 1 side
Overview
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage memory instance primarily uses low leakage HVT (LLHVT) devices and source biasing to minimize standby current. Read and write assist circuits ensure reliable operations with a periphery power supply as low as 0.72V.
Key Features
- Ultra low power data retention. Memory instances generated by the Bulk 22ULL go into a deep sleep mode that retains data at minimal power consumption.
- Self biasing. The SP SRAM 22ULL internal self-biasing capabilities provide ease of IP integration.
- High yield. To ensure high manufacturing yield, bulk 22ULL uses low leakage 6T (0.110µ2) bit cells and is consistent with Design for Manufacturing (DFM) guidelines for the Bulk 22ULL process.
- High usability. All signal and power pins are available on metal 4 while maintaining routing porosity in metal 4. Power pins can optionally be made available on metal 5 to simplify the power connections at the chip level.
Benefits
- Low Power, high yield
Applications
- IOT, Mobile
Deliverables
- SRAM Compiler
- EDA Views
- Verilog Test Bench
- Tessent BIST Synthesis Control
Technical Specifications
Foundry, Node
Bulk 22 ULL
Maturity
Qualified
Availability
NOW
Related IPs
- Single Port SRAM Compiler GF22FDX Low Power
- Single port SRAM Compiler - low power retention mode
- Register File with low power retention mode, high speed pins on 1 side
- Bulk 40ULP single port SRAM Compiler - ultra low power, low power retention mode
- Bulk 40ULP Single Port SRAM with low power retention mode, high speed pins on 1 side
- 2D (vector graphics) & 3D GPU IP A GPU IP combining 3D and 2D rendering features with high performance, low power consumption, and minimum CPU load