Ultra Low Voltage (ULV) SRAM

Mobile Semi delivers optimized, embedded SRAM solutions that are designed for the lowest operating voltages and lowest standby currents available in the marketplace. Fully functional embedded SRAMs and ROMs that operate at minimal power and have ultra-low power standby capabilities extend useful battery lives of end products. Our technology enables our customers to benefit from a significant reduction in standby current using standard foundry provided SRAM bit cells in 22nm FDX, 28nm, 40nm, and 55nm technologies. Mobile Semi has been developing and silicon testing low voltage memories since 2011. These silicon proven memories are ideal for the Internet of Things (IoT) market.

Offering 28nm, 40nm, and 55nm Silicon Proven solutions operating below 0.8V with 50MHz+ performance and 1.1V with 1.5GHz performance, Mobile Semi’s proprietary, silicon-proven design and layout techniques maximize performance and keep die sizes small. Innovative design techniques enable a wider range of Dynamic Voltage Scaling (DVS) and dynamic voltage and frequency scaling (DVFS) for minimal power consumption.

Mobile Semi’s optimized solutions are designed with the industry’s leading experience in bit cell stability and statistical analysis for yield and leakage. High Threshold Voltage (HVT) devices are used to minimize leakage currents with limited standard VT devices used when required.

Robust, low voltage latches are used throughout designs to ensure soft error immunity. Mobile Semi’s optimized, embedded SRAM solutions don’t require multiple voltages or custom bit cells. With silicon-proven solutions, Mobile Semi is the industry’s leader in optimized, low voltage embedded SRAM design.