NEO Semiconductor Introduces World’s First Extreme High Bandwidth Memory (X-HBM) Architecture for AI Chips

New X-HBM architecture delivers a 32K-bit wide data bus and potentially 512 Gbit per die density, offering 16X more bandwidth or 10X higher density than traditional HBM

San Jose, California, August 5, 2025 – NEO Semiconductor, a leading developer of breakthrough memory technologies, today introduced the world’s first Extreme High Bandwidth Memory (X-HBM) architecture for AI chips. Built to meet the growing demands of generative AI and high-performance computing, X-HBM delivers unmatched performance with a 32K-bit data bus and potentially 512 Gbit per die, dramatically surpassing the limitations of traditional HBM with 16X greater bandwidth or 10X higher density.

“X-HBM is not an incremental upgrade, it’s a fundamental breakthrough,” said Andy Hsu, Founder & CEO of NEO Semiconductor. “With 16X the bandwidth or 10X the density of current memory technologies, X-HBM gives AI chipmakers a clear path to deliver next-generation performance years ahead of the existing roadmap. It’s a game-changer for accelerating AI infrastructure, reducing energy consumption, and scaling AI capabilities across industries.”

Built on NEO’s proprietary 3D X-DRAM architecture, X-HBM represents a major leap in memory technology by eliminating long-standing limitations in bandwidth and density. In contrast, HBM5, still in development and expected to reach the market around 2030, is projected to support only 4K-bit data buses and 40 Gbit per die. A recent study from the Korea Advanced Institute of Science and Technology (KAIST) projects that even HBM8, expected around 2040, will offer just 16K-bit buses and 80 Gbit per die. In comparison, X-HBM delivers 32K-bit buses and 512 Gbit per die, allowing AI chip designers to bypass a full decade of incremental performance bottlenecks associated with traditional HBM technology.

Key Features and Benefits:

• Scalable – Enables faster data transfer between GPUs and memory for more efficient AI scaling.
• High-Performance – Unlocks untapped GPU capabilities to boost AI workloads.
• Sustainable – Reduces power and hardware needs by consolidating AI infrastructure.

NEO Semiconductor’s CEO, Andy Hsu, will deliver a keynote presentation on August 6, at 11 a.m. PST at FMS: the Future of Memory and Storage, where he will discuss the breakthrough X-HBM technology. The event takes place August 5-7, 2025, at the Santa Clara Convention Center in California, USA. NEO Semiconductor will also be exhibiting at booth #507. To schedule a meeting at FMS 2025, please contact: mayalustig@neosemic.com.

About NEO Semiconductor

NEO Semiconductor is a high-tech company pioneering next-generation memory technologies, including 3D NAND flash, 3D DRAM, and 3D AI solutions. Founded in 2012 by Andy Hsu in San Jose, California, the company holds over 30 U.S. patents. NEO’s key innovations include X-NAND™, which delivers SLC performance from TLC and QLC memory, and X-DRAM™, the world’s lowest-power DRAM architecture. In 2023, NEO introduced 3D X-DRAM™, the first DRAM built on a 3D NAND-like structure to overcome the scaling limits of conventional DRAM. In 2024, the company unveiled 3D X-AI™, a breakthrough architecture designed to accelerate AI performance and efficiency. For more information, visit https://neosemic.com.