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Radiation-hardened I/O IP

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Compare 3 IP from 2 vendors (1 - 3)
  • Full Radiation-Hardened ESD Library in GF 12nm LP/LP+

    Full ESD Library for Powers and I/O
    I/O Protection 
    Full Library is Latch-up proven to 200mA at -40C to 125C 
    Radiation Hardened 64 MeV proton test and >1.3E+09 flux

  • 1.8V and 3.3V Radiation-Hardened GPIOs with Optimized LDO in GF 12nm LP/LP+
    • A radiation-hardened GlobalFoundries 12nm LP/LP+ Flip-Chip IO library with both 1.8V and 3.3V GPIO, fail-safe GPI, analog cell, and associated ESD.
    • Also features an LDO optimized for use with 3.3V GPIO.
    Block Diagram -- 1.8V and 3.3V Radiation-Hardened GPIOs with Optimized LDO in GF 12nm LP/LP+
  • Radiation-Hardened eFPGA
    • Radiation-Hardened by Design (RHBD): Built to operate in space and defense applications, ensuring reliability under extreme conditions.
    • Customizable eFPGA IP: Tailored to specific mission requirements with adaptability to various process nodes and foundries.
    • High Reliability: Designed to withstand Total Ionizing Dose (TID) and Single Event Effects (SEE).
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