GF12 - 0.8V LVDS Rad-Hard Transceiver in GF 12nm

Overview

A radiation-hardened GlobalFoundries 12nm LP/LP+ 0.8V LVDS Transceiver.

The 2.5Gbps LVDS transceiver in GlobalFoundries LP/LP+ is designed for high-speed, low-power data transmission in radiation-intensive environments. Engineered with a Rad-Hard by Design approach, the Rad-Hard cells have been proton tested to 64 MeV with a flux exceeding 1.3E+09, and is latch-up proven to 200mA across -40C to 125C, ensuring robust immunity against TID, SEE, and SEL effects. Additionally, the LVDS transceiver meets 2kV HBM, 500V CDM, and 2kV IEC 61000-4-2 system-level ESD protection, delivering superior reliability for harsh environments. With high speed integrity, low jitter, and minimal power consumption, this IP is ideal for aerospace, defense and other mission critical applications while maintaining compliance with industry-standard LVDS specifications.

Process Details

Parameter Value
Core Device 0.8V
I/O Device 1.8V Gate Oxide
BEOL 1P13M
Top Routing LB

TX Electrical Specifications

Description Typical Units
VDDIO 1.8 V
VDD 0.8 V
TX Rise Time 190 pS
TX Fall Time 199 pS
TX Prop. Delay Rise 180 pS
TX Prop. Delay Fall 179 pS
Out Enable Delay 7692 pS
TX amplitude 385 mV
Duty Cycle 50 %

RX Electrical Specifications

Description Typical Units
RX Fall Time 71 pS
RX Delay Rise 193 pS
RX Delay Fall 198 pS
Enable Delay 81 pS
RXLoad Cap 0.1 pF
Typcial RX Freq 2.5 Gbps

 

Block Diagram

GF12 - 0.8V LVDS Rad-Hard Transceiver in GF 12nm Block Diagram

Technical Specifications

Foundry, Node
GF 12nm
GLOBALFOUNDRIES
Pre-Silicon: 12nm
×
Semiconductor IP