Analog IP for Tower
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Analog IP
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38
Analog IP
for Tower
from 10 vendors
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Fractional-N Frequency Synthesizer PLL
- Wide functional range allows all frequencies in a system to be synthesized with one PLL macro
- Input & output frequency ranges greater than 1000:1
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Custom Regulated High Capacity Charge Pump
- On-Chip Supply Rail Extension
- Extends the headroom and performance range of other on-chip blocks and components
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Super Inductor IP
- High Inductor Q (10 to 50)
- High Inductor Bandwidth (2.5Ghz to 50Ghz)
- Stackable Design
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Revolutionaly Ultra Low Phase Noise RF Amplifier-LNA IP
- Revolutionary Ultra Low Phase Noise operation
- Ultra Low Power Operation
- RF front end sensitivity enhancement
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Revolutionary Ultra Low Phase Noise Driver IP
- Revolutionary Ultra Low Phase Noise operation
- Ultra Low Power Operation
- RF front end sensitivity enhancement
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CC-100IP-PI Power Integrity Enhancement IP
- Occupies the same on chip area as standard DCAPs with at least a 600X effective capacitance increase
- Up to a 36% Dynamic Power and RF Emissions Reduction
- On-Chip Cybersecurity Enhancement
- 25% Reduction in Capacitor ESL
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CC-100IP-RF Analog and RF Sensitivity Enhancement IP
- Enhances the Sensitivity of Analog and RF Frontend Receivers
- Enhances the PSRR od Analog and RF Frontend Receivers
- Occupies the same on chip area as standard DCAPs with at least a 600X effective capacitance increase
- Up to a 36% Dynamic Power and RF Emissions Reduction
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CC-100IP-MB Electric Vehicle Mileage Booster IP
- Extends EV Driving range by 10%
- Extends the driving and Biking Range of Electric Vehicles from 16 to 30 Miles
- Occupies the same on chip area as standard DCAPs with at least a 600X effective capacitance increase
- Up to a 36% Dynamic Power and RF Emissions Reduction
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Hyper-Decoupling Capacitor with a Capacitance Multiplication, Series Inductance Nullification, Cybersecurity Enhancement and an Energy Harvesting capabilities
- Occupies the same on chip area as standard DCAPs with at least a 600X effective capacitance increase
- Up to a 36% Dynamic Power and RF Emissions Reduction
- On-Chip Cybersecurity Enhancement
- 25% Reduction in Capacitor ESL
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PVT Sensor Subsystem
- Start-up time: Typ 20us
- Current consumption: Max 25uA
- Industry standard digital interface
