RF IP for SMIC
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RF IP
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12
RF IP
for SMIC
from 4 vendors
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10)
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7 to 20 MHz Intermediate frequency amplifier
- SMIC CMOS 180 nm technology
- Wide gain range (0…62 dB)
- Low input noise figure
- Low group delay time ripple vs. frequency and gain
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Bluetooth Low Energy (BLE) IP
- Process technology: GLOBALFOUNDRIES22FDX or SMIC55LL
- No other special mask layers or devices such as MIM, HRP, or ESD are required
- Compliant with the Bluetooth 5.4 Low Energy Single Mode RF Standard
- Supply voltage: 1.1V +/-10%
- Operating junction temperature: -40°C to 85°C
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0 to 62 dB intermediate frequency amplifier
- SMIC CMOS 180 nm technology
- Wide gain range (0…62 dB)
- Low input noise figure
- Low group delay time ripple vs. frequency and gain
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GPS/Galileo/GLONASS multisystem single-band receiver
- SMIC RF CMOS 180 nm technology
- Single conversion superheterodyne receiver
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GLONASS/GPS/Galileo/BeiDou multisystem single-band 2-channel receiver RFIC
- SMIC CMOS 0.18 um technology
- Simultaneous GPS, Galileo, BeiDou and GLONASS signals reception
- Single conversion superheterodyne receiver
- Optimized for SiP implementation
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RF Transceiver SMIC 55nm
- 3GPP R14 NB_IOT??
- SMIC55nm??
- 2V ~ 3.6V????
- ???:??10mA,??68mA@14dBm output,200mA@22dBm output,????<1uA
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5 to 20 MHz Intermediate-frequency amplifier
- SMIC CMOS 0.18 um
- Wide gain range (0…62 dB)
- Low group delay time ripple vs. frequency and gain
- Analog and digital output modes
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ISDB-T1, Segment Tuner (470-860MHz UHF)
- High Performance
- Configurable 3/4 wire controller
- Self calibrating and programmable filter corner frequencies
- 8 Bit electronically tunable tracking filter
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802.11 A/B/G/N Direct Conversion Transceiver
- Fully Integrated 802.11 a/b/g/n Transceiver
- High Performance
- Low Power Consumption
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Bluetooth Low Energy (BLE) RF IP
- Single supply voltage: 1.5V to 3.6V
- Operating junction temperature: -40ºC to 85ºC
- RF output power: upto +2dBm
- Low power consumption: RX: <12mW; TX: <15mW@0dBm