Bluetooth Low Energy (BLE) IP

Overview

The Bluetooth Low Energy (BLE) technology supports the BLE standard defined by the International Standards Organization SIG, including BLE RF transceiver IP, baseband IP, and protocol software. The BLE RF transceiver IP has been successfully verified on 55nm CMOS and 22nm FD-SOI processes, supporting data transmission and reception of 1M or 2M bandwidth in the 2.4GHz band; Baseband IP includes digital modulation and demodulation, encryption & decryption, protocol packet transceiving & verification, and various low power modes, supporting full BLE baseband functions; The protocol software includes L2CAP, GATT/ATT, SMP/GAP, etc., which allows various application requirements.

Key Features

BLE RF IP
- Process technology: GLOBALFOUNDRIES22FDX or SMIC55LL
- No other special mask layers or devices such as MIM, HRP, or ESD are required
- Compliant with the Bluetooth 5.4 Low Energy Single Mode RF Standard
- Supply voltage: 1.1V +/-10%
- Operating junction temperature: -40°C to 85°C
- RF output power: up to +10dBm
- RX sensitivity: <-96 dBm typical
- Power consumption: TX 8mW@0dBm output, RX 6.5mW
- Built-in on-chip Balun to save BOM
- 16M/32M XO integrated
- SPI-slave interface for register control
BLE BB IP
- Complete modem supporting LE 1M/2M and Coded PHY S2/S8 modes
- Integrate DFE for RF signal pre-processing
- Support BLE5.1 CTE signal processing
- LE packet processing in real-time
- RF auto-control logic integrated with SPI port
- Work at 16MHz clock
- Standard HCI interface based on UART port
- Certified with SIG BQB LL5.3 full cases
- Support AHB slave-port for SoC integration

Block Diagram

Deliverables

Design Kit & Tape-out Kit
IP Datasheet and Application

Technical Specifications

Foundry, Node

GLOBALFOUNDRIES22FDX or SMIC55LL

Maturity

Silicon Proven

GLOBALFOUNDRIES

Pre-Silicon: 22nm FDX

SMIC

Pre-Silicon: 55nm LL

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