Memory & Libraries IP for Samsung

Compare 13 Memory & Libraries IP for Samsung from 9 vendors (1 - 10)

1.8V Capable GPIO on Samsung Foundry 4nm FinFET
- The 1.8V capable GPIO is an IP macro for on-chip integration. It is a 1.8V general purpose I/O built with a stack of 1.2V MOS FINFET devices. It is controlled by 0.75V (core) signals.
- Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
1.8V/3.3V Switchable GPIO with 5V I2C Open Drain and Analog Cells in Samsung 11nm
- A Samsung 11nm Flip-Chip I/O library with dynamically switchable 1.8V/3.3V GPIO with fail-safe capability, 5V I2C / SMBus open-drain cell, 5V OTP cell, 1.8V 3.3V analog cells, and associated ESD.
- A key attribute of this library is its ability to detect and dynamically adjust to a VDDIO supply of 1.8V or 3.3V during system operation.
- The GPIO cell can be configured as input, output, open source, or open drain with an optional internal 50K ohm pull up or pull down resistor.
LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
- Compliant for JEDEC standards for LPDDR5X/5/4X/4 with PHY standards
- DFI 5.1 specification PHY Interface Compliant
- Support up to 4 ranks
- x16 and x32 channel support
Ultra Low Power Embedded SRAM - Samsung 28FDSOI
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Process: Samsung 28nm FDSOI process
- Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
- Mos device: pfet, nfet, egpfet, egnfet, rpposab
- Operating current:VDD25<24mA
LVDS Driver/Buffer
- Available as LVDS driver and buffer configurations
- SLVS solutions
- Combo LVDS + GPIO solutions
- Available in Samsung 28FDS, 14LPP, 11LPP, 10LPP, 8LPP, 5LPP, 4LPPn
LVDS Receiver
- 175Mbps to 1120Mbps
- 25MHz to 160MHz
- BIST support
- Open/short detection
LVDS Transmitter
- 56Mbps to 1120Mbps
- 8MHz to 160MHz
- BIST support
- Open/short detection
Embedded OTP (One-Time Programmable) IP, 4Kx32 bits for 0.9V/1.8V FDS
- Logic Embedded IP
- Programming NeoFuse cell by using quantum tunneling mechanism
- High yield performance
- Small IP size
OTP One Time Programmable IP Samsung 90CIS
- Small IP Size
- High reliability
- Radiation hardening