Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter

Key Features

• Process: Samsung 28nm FDSOI process
• Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
• Mos device: pfet, nfet, egpfet, egnfet, rpposab
• Operating current:VDD25<24mA
• Operating junction temperature: - 40°C ~ +25°C ~ +125°C

Technical Specifications