ESD Protection IP
ESD (Electrostatic Discharge) Protection IP cores provide efficient defense against electrostatic discharges, reducing the risk of failure and enhancing product performance. By incorporating ESD protection into your designs, you can meet industry standards, improve device robustness, and ensure your products remain durable in real-world environments.
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ESD Protection IP
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146
ESD Protection IP
from 8 vendors
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10)
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1.8V general purpose I/O for 4nm FinFET
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
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3.3V general purpose I/O for 28nm CMOS
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
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Power and Ground BondPads that include CC-100IP Digital and Switching Circuit Power Reduction Technology, Featuring 20% to 40% Total Dynamic Power Reduction
- 20% to 40% Digital and Dynamic Power Reduction
- Fits into any IC bondpad
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1.0-3.3V GPIO With I2C Open Drain And 3.3V & 5V Analog Cells in 55nm
- 1.0V-3.3V | 3.3V IO operation
- Dual independent IO rails
- Output enable / disable (HiZ when disabled)
- Power-down control (HiZ upon VDD disable)
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A 180nm Flip-Chip IO library with 1.2-1.8V GPIO, 1.8V & 5V analog/RF, 20-36V ultra-low leakage low-cap HV analog and OTP program cell
- GPIO:
- ANALOG
- OTP Programming Cell
- Physical Attributes
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1.8V/3.3V Switchable GPIO With 5V I2C Open Drain & Analog in 16/12nm
- Multi-voltage 1.8V / 3.3V switchable operation
- 4 selectable drive strengths (25-235MHz @1.8V, 10pF)
- Full-speed output enable
- Independent power sequencing
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A 28nm 1.8V-3.3V Fail-Safe General-Purpose IO & OSC
- Fail-Safe GPIO in TSMC 28nm process technology
- Physical features
- This library also features a 33MHz OSC (3.3V).
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LVDS IO Pad Set
- Powered from 1.8V ±10% and 1.0V (±10%) to 1.1V (-10%/+5%) core power supplies
- Operates up to 1.2GHz (2.4Gbps)
- Input receive sensitivity of 75mV peak differential (without hysteresis)
- Common mode range from 0V to 2.4V (limited by Power Supply)
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High voltage tolerant I/O
- Scalable robustness
- Area efficient
- low capacitance option
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Small area rail clamp for FinFET
- Power clamp ESD solutions
- Rail clamp ESD protection
- 0.75V domain