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Compare 399 Special IP from 13 vendors (1 - 10)
  • Wirebond Digital and Analog Library in TSMC 65nm
    • A mixed Digital and Analog Library, compatible with I2C and I3C Protocols.
    • This library is a mixed Digital and Analog library built for the TSMC 65nm process.
    • It is based around a Fail-Safe General Purpose Input/Output (FSGPIO) cell that is compatible with both I2C and I3C protocols.
    Block Diagram -- Wirebond Digital and Analog Library in TSMC 65nm
  • SLVS Transceiver in TSMC 28nm
    • This 1.8V SLVS transceiver is a high-performance, low-power I/O solution optimized for TSMCs 28nm process.
    • Designed with 1.8V thick oxide devices and a standard low-voltage core interface at 0.8V, this transceiver ensures robust operation across a wide temperature range (-40°C to 125°C).
    • Supporting high-speed differential signaling up to 2Gbps, it delivers ex- ceptional signal integrity with low jitter and precise eye diagrams.
    Block Diagram -- SLVS Transceiver in TSMC 28nm
  • 5V ESD Clamp in GlobalFoundries 180nm LPe
    • A GlobalFoundries 180nm LPe Specialized 5V ESD Clamp.
    • A key attribute of this 5V Clamp is that it can be used for either signal protection or 1.8V power supplies.
    • The clamp is a single cell, 44um x 32um in size. It is built from the substrate to metal 6.
    Block Diagram -- 5V ESD Clamp in GlobalFoundries 180nm LPe
  • HDMI, LVDS, RF and Analog Pads in TSMC 45/40nm
    • A 1.0V to 5V Analog I/O library that includes an HDMI, LVDS, and Analog/RF Low Capacitance pad set in TSMC 45/40nm HPM process.
    • This library is collection of analog only IO and Power/Ground pads that include ESD. The target applications are high performance analog interfaces including HDMI, RF, LVDS, basic analog and other applications.
    • The pads include a host of specialty features including fail safe, low capacitance, high ESD protection, and IEC robustness.
    Block Diagram -- HDMI, LVDS, RF and Analog Pads in TSMC 45/40nm
  • Wirebond I/O Library in TSMC 130nm
    • A radiation-hardened TSMC 130nm Wirebond I/O Library with 3.3V GPIO, 3.3V LVDS TX & RX, 3.3V I2C ODIO, 3.3V Analog cell, OTP cell, and associated ESD.
    • Key attributes of this silicon-proven, radiation hardened I/O library include an extended operational temperature range (-50C to 200C), a sleep retention mode, and a built in power regulation PMOS device for core VDD.
    Block Diagram -- Wirebond I/O Library in TSMC 130nm
  • I/O Library in TSMC 130nm 5V Gen3 BCD
    • A TSMC 130nm Wirebond/Flipchip compatible I/O Library with 5V GPIO, 5V ODIO, 5V Analog I/O and 5V Power Supply I/O.
    • This silicon-proven, I/O Library features a 5V General Purpose I/O, 5V Open-Drain I/O, 5V Analog I/O, 5V Power Supply and an area efficient 5V ESD protection scheme.
    Block Diagram -- I/O Library in TSMC 130nm 5V Gen3 BCD
  • Ultra-low leakage I/O Library in TSMC 22nm
    • A TSMC 22nm Wirebond / Flipchip I/O library with dynamically switchabe 1.8V/3.3V GPIO, 3.3V I2C ODIO, 3.3V Analog Cell and associated ESD.
    • This is an ultra-low leakage library. The GPIO has a worst-case leakage of only 425nA.
    • It works with a wide VDDIO supply range from 1.8V to 3.3V during system operation without the need for the customer to manually switch between high and low-voltage modes.
    Block Diagram -- Ultra-low leakage I/O Library in TSMC 22nm
  • 5MHz-35MHz Low Power Crystal Oscillator - TSMC 0.18µ
    • 4MHz-35MHz Frequency range.
    • No external bias or limit resistors required.
    • Current optimization for best power at frequency.
    • Amplitude control loop.
    • The OSCI pad input can be used as a CMOS input for test.
    • Uses single 1.8V supply.
    • Enable/power down provision.
    Block Diagram -- 5MHz-35MHz Low Power Crystal Oscillator - TSMC 0.18µ
  • I3C IO
    •  3.3 Volt bi-directional IO capability and multi-voltage capability (1.8V to 3.3V).
    •  This combo IO supports MIPI I3C IO specifications in 1.8V to 3.3V range.
    •  Supports I2C SM/FM/FM+ specifications in 1.8V to 3.3V range.
    Block Diagram -- I3C IO
  • Block Diagram -- Power and Ground BondPads that include CC-100IP Digital and Switching Circuit Power Reduction Technology, Featuring 20% to 40% Total Dynamic Power Reduction
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