Flipchip 1.8V/3.3V I/O Library with ESD-hardened GPIOs in TSMC 12nm FFC/FFC+

Overview

A 1.8V/3.3V flip-chip I/O library with ESD-immune GPIOs and integrated POC circuitry in TSMC FFC/FFC+.

This library is a production-ready I/O library built on the TSMC 12nm process. The library features 1.8V to 3.3V GPIOs with programmable drive strength, hysteresis, and control logic. It includes support cells for all power domains: 0.8V, 1.8V, and I/Oand incorporates latch-up immune, JEDEC-compliant ESD structures. The library is designed for flip-chip packaging and includes vertical and horizontal variants to support all die edge orientations. All power domains include integrated power-on control (POC) cells for safe and reliable sequencing.

Operating Conditions

Parameter Value
VDDIO 1.8V / 3.3V +/-10%
Core VDD 0.8V +/-10%
Tj -40°C to 125°C

Cell Size and Metal Stack

Cell Size Metal Stack
MH_IO 25um x 53um
MH_VDDIO_POC 50um x 53um
Metal Stack 1P9M

Library Cell Summary

Cell Type Feature
MH_IO 1.8V/3.3V GPIO, 2-bit drive strength
MH_VDDIO_ POC POC and ESD protection
MH_VDD / VDD18 0.8V / 1.8V power cells w/ ESD
MH_CORNER Power continuity at pad corner

Key Features

GPIO Features

  • Dual drive strength control (DS0/DS1)
  • Output enable, input hysteresis, pull-up/down control
  • Fully ESD compliant with local clamp topology

Power and POC Features

  • Dedicated VDDIO, VDD18, and VDD core power pads
  • Integrated POC signals for safe sequencing
  • Required for robust ESD paths across pad ring

Compliance

  • 2kV HBM per JEDEC JS-001
  • 500V CDM
  • Latch-up immune
  • Flip-chip compatible

Block Diagram

Flipchip 1.8V/3.3V I/O Library with ESD-hardened GPIOs in TSMC 12nm FFC/FFC+ Block Diagram

Technical Specifications

Short description
Flipchip 1.8V/3.3V I/O Library with ESD-hardened GPIOs in TSMC 12nm FFC/FFC+
Vendor
Vendor Name
Foundry, Node
TSMC 12nm FFC/FFC+
TSMC
Pre-Silicon: 12nm
Silicon Proven: 12nm
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Semiconductor IP