Body-Bias IP
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Adaptive Body Bias Generator on Samsung 28nm LN28FDS
- The adaptive body bias generator (ABBG) consists of a positive-BBG and a negative-BBG for FDSOI-MOS transistors.
- The ABBG is used for either Reverse Body Biasing (RBB) to reduce leakage current of the logic devices or Forward Body Biasing (FBB) to improve the system performance by adjusting the body voltages of transistors.
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Body bias voltage generator - GLOBALFOUNDRIES 22FDX
- The ABX Generator IP is a body bias voltage generator for the ABX Platform for GLOBALFOUNDRIES 22FDX® technology.
- It contains a closed loop body bias regulation loop to generate N-well and P-well bias voltages for adaptive compensation of process, voltage and temperature (PVT) variations during device operation.
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Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX
- RI_ABB_GF22FDX is a cutting-edge adaptive body bias (ABB) generator for GLOBALFOUNDRIES® 22FDX® technology.
- Featuring patented closed control loops with independent N-well and P-well body bias voltage generation, this silicon-proven IP dynamically compensates for process, voltage, and temperature (PVT) variations during operation.
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ABX® Automotive Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX
- RI_ABB_GF22FDX_AM is an adaptive body bias voltage generator for automotive applications in Globalfoundries 22FDX® technology.
- It contains a closed loop body bias regulation loop to generate N-well and P-well bias voltages for compensation of process, voltage and temperature (PVT) variations during operation.
- This results in up to 76% leakage power improvement for automotive grade-1 applications up to 150°C junction temperature.
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Adaptive Body-Bias Subsystem enabling Process, Voltage & Temperature compensation to leverage FDSOI body-biasing capabilities
- Provides up to 7x energy-efficiency gain at low voltage
- Provides up to 2x energy-efficiency gain for high performance applications
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Capless low input voltage LDO in GF 22FDX
- GlobalFoundries 22FDX
- Low silicon area
- Low BoM cost, no output capacitor required
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7 µW always on Audio feature extraction with filter banks
- µW power consumption
- Integted Voice Activity Detection
- Running on a 32kHz clock in the always on domain
- Quick integration, no software required
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Low-power capacitor-less LDO designed in Samsung Foundries LF6RLP process
- Low BoM, no external capacitor required
- Low shutdown current to ensure low power power consumption in sleep mode when the LDO is turned off
- Three modes : operation, IDLE and STOP1 to enable various power modes at SoC-level
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Low-power capacitor-less LDO with embedded voltage reference designed in Samsung Foundries LF6RLP process
- Low BoM, no external capacitor required
- Low shutdown current (40 nA) to ensure low power power consumption in sleep mode when the LDO is turned off
- Three modes : operation, IDLE and STOP1 to enable various power modes at SoC-level
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Capless LDO regulator in TSMC 22ULL
- Low silicon area
- Fast transient response
- Low BoM cost: no output capacitor required
- Low-Power (LP) mode to supply AON domain