Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX

Overview

RI_ABB_GF22FDX is a cutting-edge adaptive body bias (ABB) generator for GLOBALFOUNDRIES® 22FDX® technology. Featuring patented closed control loops with independent N-well and P-well body bias voltage generation, this silicon-proven IP dynamically compensates for process, voltage, and temperature (PVT) variations during operation.

Specification

  • fref = < 10MHz to 50 MHz >
  • Pactive = 12 μW (typical)
  • area < 0.006 mm² (smallest pump strength)
  • - 0.2 V < VNW < 2.4 V
  • - 2.4 V < VPW < 0.2 V

Nominal Supply Voltages

  • Body bias generation: 1.80 V
  • Control logic: 0.80 V
  • PVT monitors: 0.40 V / 0.50 V / 0.55 V / 0.60 V / 0.65 V / 0.80 V / 0.90 V

Key Features

  • Integrated adaptive body bias (ABB) control loop
  • Charge pumps for N-Well and P-Well voltages,     operated from IO supply voltage level
  • Integrated PVT monitors for true independent adaption     of NMOS and PMOS performance
  • Operation from typically 10 MHz, up to 50 MHz reference clock
  • Available in forward (FBB) and reverse body bias (RBB) versions
  •  Available in multiple charge pump drive strengths supporting     a wide range of active chip areas
  • Delivered as hardmacro for easy and seamless integration
  • Supports dynamic bias corners down to 0.40 V nominal
  •  Interoperable with foundation IP standard cells and SRAM

Block Diagram

Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX Block Diagram

Applications

  • Automotive
  • Low Power
  • IoT
  • High Speed Computing

Deliverables

  •  Verilog simulation models
  •   .lib /.db timing and power models
  •   .lef layout abstract views
  •  NDM and Milkyway libraries
  •  GDSII layout
  •   LVS netlist
  •  EMIR models
  •  DFT models
  •  Available for 22FDX® and 22FDX® PDKs

Technical Specifications

Foundry, Node
GLOBALFOUNDRIES 22FDX
Maturity
silicon-proven
Availability
now
GLOBALFOUNDRIES
Pre-Silicon: 22nm FDX
Silicon Proven: 22nm FDX
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Semiconductor IP