The adaptive body bias generator (ABBG) consists of a positive-BBG and a negative-BBG for FDSOI-MOS transistors. The ABBG is used for either Reverse Body Biasing (RBB) to reduce leakage current of the logic devices or Forward Body Biasing (FBB) to improve the system performance by adjusting the body voltages of transistors.
Adaptive Body Bias Generator on Samsung 28nm LN28FDS
Overview
Key Features
- 1.8V±10% and 0.72V~1.1V dual power supply
- Operational Junction Temperature(TJ): -40~125℃
- Controllable output range: 0.3 V to 1.4 V and -1.4 V to -0.3 V
- Programmable output voltage with 4-bit control(100mV step)
- Operation mode: Active and Bypass Mode
- Required Negative Charge Pump output capacitance: 1uF
Benefits
- Low Area
- Low Power
Block Diagram
Applications
- Mobile/Consumer/IoT application
Deliverables
- FE(Front-End) : LEF, LIBERTY, MODEL, TB FUNCTION, TB VECTOR GEN, TWRAP
- BE(Back-End) : CIR, DFM, DRC, GDS, LVS
Technical Specifications
Short description
Adaptive Body Bias Generator on Samsung 28nm LN28FDS
Vendor
Vendor Name
Foundry, Node
SF 28nm, LN28FDS
Samsung
Pre-Silicon:
28nm
FDS