Will 1.4-nm help Samsung catch up with TSMC, IFS?
By Majeed Ahmad, EDN (November 6, 2023)
Samsung, playing a distant second to TSMC for quite some time, has vowed to launch the 1.4-nm chip manufacturing node by 2027, leapfrogging both TSMC and Intel Foundry Services (IFS) by a wide margin. The South Korean electronics conglomerate is also confident about producing the 2-nm chips in 2025 as planned.
Both 1.4 nm and 2 nm chips will be fabricated using the gate-all-around (GAA) technology that Samsung pioneered on its 3-nm chips released this year. Archrivals TSMC and IFS will transition from Fin field-effect transistors (FinFETs) to GAA transistors at their 2-nm nodes due for commercial launch in 2025 and 2024, respectively.
To read the full article, click here
Related Semiconductor IP
- 12-bit, 400 MSPS SAR ADC - TSMC 12nm FFC
- 10-bit Pipeline ADC - Tower 180 nm
- Simulation VIP for Ethernet UEC
- Automotive Grade PLLs, Oscillators, SerDes PMAs, LVDS/CML IP
- CAN-FD Controller
Related News
- Leading edge technology company in India will Design, Build and License Semiconductor IP products and Services in 14nm Technology
- Samsung Electronics Unveils Plans for 1.4nm Process Technology and Investment for Production Capacity at Samsung Foundry Forum 2022
- Exec tried to set up copy-cat Samsung fab in China
- TSMC Arizona and U.S. Department of Commerce Announce up to US$6.6 Billion in Proposed CHIPS Act Direct Funding, the Company Plans Third Leading-Edge Fab in Phoenix
Latest News
- Qualitas Semiconductor Demonstrates Live of PCIe Gen 6.0 PHY and UCIe v2.0 Solutions at ICCAD 2025
- WAVE-N v2: Chips&Media’s Custom NPU Retains 16-bit FP for Superior Efficiency at High TOPS
- Quintauris releases RT-Europa, the first RISC-V Real-Time Platform for Automotive
- PQShield's PQCryptoLib-Core v1.0.2 Achieves CAVP Certification for a broad set of classical and post-quantum algorithms
- M31 Debuts at ICCAD 2025, Empowering the Next Generation of AI Chips with High-Performance, Low-Power IP