MoSys Strengthens Management Team in Japan

Shigeru Shimauchi to Serve as General Manager of Tokyo, Japan Office

SUNNYVALE, Calif. (April 7, 2003) – MoSys, Inc. (NASDAQ: MOSY) the industry’s leading provider of high density SoC embedded memory solutions today announced Shigeru (Gerry) Shimauchi has joined its worldwide management team. As general manager of the company’s Japan office, Shimauchi will oversee MoSys’ activities in Tokyo and provide local contact to partners and customers in the region.

“We are very pleased to add Gerry to our team. His experience benefits our Japanese partners and increases MoSys’ visibility within the marketplace,” said Dr. Fu-Chieh Hsu, president, chairman and chief executive officer at MoSys. “Having someone with Gerry’s expertise managing our Tokyo, Japan office furthers our reach in the region and demonstrates that MoSys is determined to offer outstanding service to all of our partners, customers and vendors in the region.”

“I am honored to join MoSys’ team and to work with some of the best talent in the industry, while providing the company my knowledge and understanding of the Japanese marketplace,” said Shimauchi. “MoSys’ superior memory technology establishes the company as an industry leader and I am eager to build on that reputation throughout the region.”

Shimauchi brings more than 20 years of experience in sales and management to MoSys. Prior to joining the company he held various management positions with semiconductor companies Nippon Sipex Corporation and TSMC Japan, the world’s largest foundry. Additionally, Shimauchi served in senior management roles with Burr-Brown, Japan, later acquired by Texas Instruments, and Fujitsu Ltd., one of the largest electronics companies in the world.

ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys’ licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.