MoSys Boosts Global Sales Presence With New Japan Country Manager
Takashi Murayama to Lead Company's Continued Expansion in Key Market
SUNNYVALE, Calif.-- April 5, 2007 -- MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP) solutions, today named Takashi Murayama (56) as vice president and country manager, Japan. Murayama-san joins MoSys from Transmeta Corp. where he served as vice president of Transmeta Japan, while simultaneously overseeing the company's broader Asia-Pacific operations. Reporting to MoSys' vice president of worldwide sales, Raj Singh, Murayama-san will drive the company's sales and marketing operations in the region.
Japan is a key market for MoSys, as evidenced by recent design wins and technology announcements with NEC, Fujitsu, and others. Murayama-san will lead the company's sales and marketing initiatives in the region, leveraging his extensive network to forge new customer partnerships for the company.
"Murayama's combination of business experience and technology savvy make him a superb candidate to drive MoSys' continued expansion in Japan," said Singh. "For more than two decades, he has successfully established a strong presence in Japan for multiple international technology companies such as Intel, Conexant, and Transmeta. Along the way, he has skillfully managed complex IP agreements with large Japanese customers, making him a great addition to MoSys as we further penetrate this key market with our memory IP solutions."
About MoSys, Inc.
Founded in 1991, MoSys, develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys' patented 1T-SRAM(R) and 1T-FLASH(R) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com.
Related Semiconductor IP
- NFC wireless interface supporting ISO14443 A and B with EEPROM on SMIC 180nm
- DDR5 MRDIMM PHY and Controller
- RVA23, Multi-cluster, Hypervisor and Android
- HBM4E PHY and controller
- LZ4/Snappy Data Compressor
Related News
- IPextreme Boosts European Presence by Hiring Semiconductor Luminary Jens Kjelsbak as CTO and Establishing European Headquarters in Munich
- Evatronix Appoints Country Manager in Mainland China to Enhance Worldwide Customer Support
- MoSys Partners with Macnica, Inc. Division, TecStar Company, to Strengthen Representation in Japan for its Bandwidth Engine(R) ICs
- Signature IP Extends Global Footprint to Israel with Local Sales and Application Engineering Presence
Latest News
- CAST Releases First Dual LZ4 and Snappy Lossless Data Compression IP Core
- Arteris Wins “AI Engineering Innovation Award” at the 2025 AI Breakthrough Awards
- SEMI Forecasts 69% Growth in Advanced Chipmaking Capacity Through 2028 Due to AI
- eMemory’s NeoFuse OTP Qualifies on TSMC’s N3P Process, Enabling Secure Memory for Advanced AI and HPC Chips
- AIREV and Tenstorrent Unite to Launch Advanced Agentic AI Stack