Low-Power Apps, Foundries Eye Emerging Memories
Despite opportunities, higher densities remain a challenge for most emerging memories.
By Gary Hilson, EETimes (December 19, 2022)
Emerging memories are entering a new phase, but without a high-profile phase-change memory (PCM) that was responsible for the segment’s growth in previous years.
Intel announced it was sunsetting Optane, its PCM-based 3D XPoint technology, just as analysts Thomas Coughlin and Jim Handy were wrapping their annual report, which meant some last-minute revisions to “Emerging Memories Enter Next Phase.”
“Optane was on its way out and we still had a big Optane part in the report,” Handy told EE Times in an interview.
Without Optane, the thrust of the annual joint report from Coughlin Associates and Handy’s Objective Analysis is that the next phase for emerging memories is the major foundries — including Samsung, TSMC, and GlobalFoundries — shipping production parts that have either resistive random-access memory (ReRAM) or magnetoresistive RAM (MRAM) in them.
To read the full article, click here
Related Semiconductor IP
- eUSB2V2.0 Controller + PHY IP
- I/O Library with LVDS in SkyWater 90nm
- 50G PON LDPC Encoder/Decoder
- UALink Controller
- RISC-V Debug & Trace IP
Related News
- Virage Logic Expands Distribution Model; 'First Mover' Status Among Emerging Foundries Underscores Market Leadership
- Emerging Memories: Ship First, Perfect Later
- X-FAB Introduces New Low-Power eFlash Block Optimized for Energy Harvesting & IoT Devices
- Researchers Explore Emerging Memories for AI
Latest News
- Nuclei Announces Strategic Global Expansion to Accelerate RISC-V Adoption in 2026
- Semidynamics Unveils 3nm AI Inference Silicon and Full-Stack Systems
- Andes Technology Launches RISC-V Now! — A Global Conference Series Focused on Commercial, Production-Scale RISC-V
- Rambus Reports Fourth Quarter and Fiscal Year 2025 Financial Results
- IntoPIX And Cobalt Digital Enable Scalable, Low-Latency IPMX Video With JPEG XS TDC At ISE 2026