Intel's 10nm Secrets Predicted
Quantum well FETs, germanium, InGaAs in mix
Rick Merritt
4/21/2015 07:15 PM EDT
SAN JOSE, Calif. – A semiconductor analyst is making a bold and detailed prediction about the process technology Intel Corp. will use for its next two generations. If he is right, the world’s largest chip maker is set to leapfrog the industry once again.
Intel will use quantum well FETs starting with its 10nm process, said David Kanter in an analysis posted on his Real World Technologies Web site. The new transistor structures will use two new materials – indium gallium arsenide (InGaAs) for n-type transistors and strained germanium for p-type devices, he said.
To read the full article, click here
Related Semiconductor IP
- Flexible Pixel Processor Video IP
- Bluetooth Low Energy 6.0 Digital IP
- Ultra-low power high dynamic range image sensor
- Neural Video Processor IP
- Flash Memory LDPC Decoder IP Core
Related News
- Intel's 10nm Node: Past, Present, and Future
- Intel's 10nm Node: Past, Present, and Future - Part 2
- Industry Support Builds for Intel"s Formal Property Verification Language Initiative
- Six major PDA makers back Intel's StrongARM RISC chip
Latest News
- Silvaco Completes Acquisition of Mixel Group, Inc. a Provider of Low-Power, High-Performance Mixed-Signal Connectivity IP Solutions
- Rapidus adopts Teamcenter for Semiconductor Lifecycle Management
- Q4 FY25 Quarterly Activities Report: Weebit Nano well-positioned to achieve 2025 commercial targets
- SiMa.ai Raises $85M to Scale Physical AI, Bringing Total Funding to $355M
- Armv9 and CSS Royalties Drive Growth in $1bn Arm Q1 Earnings