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              For a timing controller IC designed 0.13um CMOS process an EOS was given: passing 17V IEC-61000-4-5 test. Sofics engineers developed calculation algorithm result optimized I/O&rsquo;s compliance. The resulting product passed required first time right customer able subsequent new level.\r\n
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              Design cost reduction\r\n
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              Designing ESD protection can be very costly: frequently many test structures are required  analysis needs to done IP positions need checked and respected&hellip;. Sofics has a wide range of solutions for applications silicon proven in processes. As an provider we distribute the design over different customers lowering everyone.\r\n
              \r\n
              Mask reduction\r\n
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              Nowhere task selecting optimal minimal mask set is more challenging than BCD Often large variety options available. So far always succeeded creating using only masks available functional elements IC.\r\n
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              In one example customer had working product (an LCD driver) but consumed too much area. optimized diode size layout reduced I/O bus scheme area designed new power clamp worked out calculation sheet determine optimum placement. This resulted 25% reduction overall die 12% significantly cutting product&rsquo;s manufacturing cost. Since engagement been able make consistently smaller I/O&rsquo;s cells repetition rate. These enhancements lead hence cheaper dies. The rewarded with increased competitiveness bigger market share.\r\n
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              Speed up time-to-market\r\n
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              Designing time consuming: often at least run setting back IC couple months. processes readily your fingertips.\r\n
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              Risk reduction\r\n
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              Typical ICs high voltage or end harsh environments such as automotive industrial applications. Robustness requirements reach beyond merely specifications. Sofics&rsquo; approach PowerQubic anticipate possible interaction specifications against myriad electrical hazards &ndash; optimizing robustness..\r\n
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              Proven portability\r\n
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              BCD all portability process generation next trigger series chips order investigate properties during various disturbances. developed work-arounds enabling pins without chip. In was protected 4kV HBM 200V MM untested 0.18um process. holding delivered 28V well above 24V.
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              <p>As in all Sofics&rsquo; solutions, we strive for a minimal mask set to meet all requirements. In one example, we delivered digital IO&rsquo;s for 1.8V-3.6V domain using 5V transistors &ndash; as was the customers request.</p>
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              Supported features include core isolation  output enable and pull enable. Extra such as input enable/disable programmable drive strength select can be supported upon request.\r\n
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              \t<li>Programmable slope control&nbsp;</li>\r\n
              \t<li>0.9V digital interface&nbsp;</li>\r\n
              \t<li>Bias generation circuit can be shared over multiple I/O instances</li>\r\n
              </ul>
              """
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              <p>The 1.2V Thin Gate GPIO is an IP macro for on-chip integration. It is a 1.2V general purpose I/O that does not rely on thick-gate devices. Only thin-gate, 0.9V capable core MOS devices are used in the design.</p>\r\n
              \r\n
              <p>Supported features include core isolation, programmable slew rate compensation, programmable drive strength, input/output enable, pull select and pull enable. Extra features such as programmable hysteresis can be supported upon request.</p>\r\n
              \r\n
              <p>The 1.2V Thin Gate GPIO targets radiation hard applications or other applications prohibiting the use of thick gate I/O devices. By default, a 2kV HBM ESD protection is included. This is however easily scaled to any desired level. This specific IP macro is designed in TSMC 28nm RF HPC+, and can be ported to other technologies upon request using Sofics inhouse design tool flow.</p>\r\n
              \r\n
              <p><strong>Physical implementation&nbsp;</strong></p>\r\n
              \r\n
              <ul>\r\n
              \t<li>TSMC 28nm RF HPC+ 1P9M&nbsp;</li>\r\n
              \t<li>No thick gate devices, MIM cap or STI required&nbsp;</li>\r\n
              \t<li>Pad size 70um x 70um</li>\r\n
              </ul>
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              \t<li>Supported features include core isolation, programmable slew rate compensation, programmable drive strength, input/output enable, pull select and pull enable. Extra features such as programmable hysteresis can be supported upon request.</li>\r\n
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              The 1.2V Thin Gate GPIO is an IP macro for on-chip integration. It a general purpose I/O that does not rely on thick-gate devices. Only thin-gate  0.9V capable core MOS devices are used in the design.\r\n
              \r\n
              Supported features include isolation programmable slew rate compensation drive strength input/output enable pull select and enable. Extra such as hysteresis can be supported upon request.\r\n
              \r\n
              The targets radiation hard applications or other prohibiting use of thick gate By default 2kV HBM ESD protection included. This however easily scaled to any desired level. specific designed TSMC 28nm RF HPC+ ported technologies request using Sofics inhouse design tool flow.\r\n
              \r\n
              Physical implementation&nbsp;\r\n
              \r\n
              \r\n
              \tTSMC 1P9M&nbsp;\r\n
              \tNo MIM cap STI required&nbsp;\r\n
              \tPad size 70um x 70um\r\n
               \r\n
              \tOvervoltage tolerant design&nbsp;\r\n
              \tCore domain isolation&nbsp;\r\n
              \tCompatible with ring&nbsp;\r\n
              \tVertical horizontal orientation&nbsp;\r\n
              \tTemp range -40&deg;C 125&deg;C TJ&nbsp;\r\n
              \t100k&Omega; pullup/pulldown&nbsp;\r\n
              \tIntegrated ESD&nbsp;\r\n
              \tProgrammable slope control&nbsp;\r\n
              \t0.9V digital interface&nbsp;\r\n
              \tBias generation circuit shared over multiple instances\r\n
              """
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              <p><strong>Scalable on-chip HBM (MM) levels</strong></p>\r\n
              \r\n
              <p>Some applications need higher ESD robustness levels. For instance: 4kV HBM for IoT, or 8kV for HDMI (or DisplayPort) pins are fairly common specifications. Sofics&rsquo; solutions can be scaled to any level &ndash; from 1kV or 2kV HBM to 8kV and higher &ndash; for one pin, or for full chip. And the same goes for MM &ndash; should your application require this spec. Note that in some cases we can scale down as well: to 100V HBM in combination with extremely low capacitance (smaller then 10fF) requirements for instance.</p>\r\n
              \r\n
              <p><strong>Higher on-chip CDM levels</strong></p>\r\n
              \r\n
              <p>CDM is the most important ESD reliability specification, but also the most difficult to reach and to predict. Sofics&rsquo; dedicated design approach, based on VF-TLP (very fast Transmission Line Pulser), helps to make CDM more predictable and to achieve the desired levels. A lot of parameters influence the end results (such as die size, package size, air humidity, test (method) used etc.).</p>\r\n
              \r\n
              <p><strong>Meeting system level ESD on-chip</strong></p>\r\n
              \r\n
              <p>A lot of the innovative systems target low-cost and mobile applications &ndash; and also this relates to ESD. To reduce the system size and the bill of materials, system designers remove board level ESD protection from the mini-Printed Circuit Boards (PCB). 20 years ago, such Transient Voltage Suppressor (TVS) devices were added to protect ICs against ESD stress during the actual use of products. Without such TVS protection and due to the shorter PCB traces ICs are now more severely stressed under ESD test events like IEC 61000-4-2. Moreover, the probability of ESD stress is much higher in mobile systems as they are operated in harsh environments.</p>\r\n
              \r\n
              <p><strong>EOS protection</strong></p>\r\n
              \r\n
              <p>For a timing controller IC, designed in a 0.13um CMOS process, an EOS specification was given: passing 17V on the IEC-61000-4-5 test. Sofics engineers developed a calculation algorithm to make the result predictable and optimized the I/O&rsquo;s to reach 17V compliance. The resulting product passed the required level first time right, and the customer was able to scale subsequent ICs to any new, desired level.</p>\r\n
              \r\n
              <p><strong>Radiation</strong></p>\r\n
              \r\n
              <p>SEL (Single Event Latchup) can cause upset in systems in high radiation fields. Aerospace is one typical application, but other examples may include particle detectors/accelerators or even nuclear applications. Sofics gained a strong reputation in the field, with customers in a wide variety of applications, developing ICs in often advanced CMOS technologies.</p>
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              Scalable on-chip HBM (MM) levels\r\n
              \r\n
              Some applications need higher ESD robustness levels. For instance: 4kV for IoT  or 8kV HDMI (or DisplayPort) pins are fairly common specifications. Sofics&rsquo; solutions can be scaled to any level &ndash; from 1kV 2kV and one pin full chip. And the same goes MM should your application require this spec. Note that in some cases we scale down as well: 100V combination with extremely low capacitance (smaller then 10fF) requirements instance.\r\n
              \r\n
              Higher CDM levels\r\n
              \r\n
              CDM is most important reliability specification but also difficult reach predict. dedicated design approach based on VF-TLP (very fast Transmission Line Pulser) helps make more predictable achieve desired A lot of parameters influence end results (such die size package air humidity test (method) used etc.).\r\n
              \r\n
              Meeting system on-chip\r\n
              \r\n
              A innovative systems target low-cost mobile relates ESD. To reduce bill materials designers remove board protection mini-Printed Circuit Boards (PCB). 20 years ago such Transient Voltage Suppressor (TVS) devices were added protect ICs against stress during actual use products. Without TVS due shorter PCB traces now severely stressed under events like IEC 61000-4-2. Moreover probability much they operated harsh environments.\r\n
              \r\n
              EOS protection\r\n
              \r\n
              For a timing controller IC designed 0.13um CMOS process an EOS was given: passing 17V IEC-61000-4-5 test. Sofics engineers developed calculation algorithm result optimized I/O&rsquo;s compliance. The resulting product passed required first time right customer able subsequent new level.\r\n
              \r\n
              Radiation\r\n
              \r\n
              SEL (Single Event Latchup) cause upset high radiation fields. Aerospace typical other examples may include particle detectors/accelerators even nuclear applications. gained strong reputation field customers wide variety developing often advanced technologies.
              """
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              <p><strong>Design cost reduction</strong></p>\r\n
              \r\n
              <p>Designing ESD protection can be very costly: frequently many test structures are required, analysis needs to be done, IP positions need to be checked and respected&hellip;. Sofics has a wide range of solutions, for a wide range of applications, silicon proven in a wide range of processes. As an IP provider, we can distribute the ESD design cost over many different customers, lowering the cost for everyone.</p>\r\n
              \r\n
              <p><strong>Mask cost reduction</strong></p>\r\n
              \r\n
              <p>Nowhere the task of selecting the optimal, minimal mask set is more challenging than in BCD processes. Often a large variety of options are available. So far, Sofics always succeeded in creating protection using only the masks available for the functional elements of the IC.</p>\r\n
              \r\n
              <p><strong>Manufacturing cost reduction</strong></p>\r\n
              \r\n
              <p>In one example, a customer had a working product (an LCD driver), but the ESD protection consumed too much area. Sofics optimized the diode size and layout, reduced the I/O bus scheme and area, designed a new Sofics power clamp, and worked out a calculation sheet to determine optimum power clamp placement. This resulted in a 25% I/O size reduction, and an overall die area reduction of more than 12%, significantly cutting the product&rsquo;s manufacturing cost. Since the Sofics engagement the customer has been able to make consistently smaller I/O&rsquo;s and power cells, and has reduced the power clamp repetition rate. These enhancements lead to smaller and hence cheaper product dies. The customer has been rewarded with significantly increased competitiveness and a bigger market share.</p>\r\n
              \r\n
              <p><strong>Speed up time-to-market</strong></p>\r\n
              \r\n
              <p>Designing ESD protection can be very time consuming: often at least one silicon run is required, often setting back the IC design for a couple of months. Sofics has a wide range of solutions, for a wide range of applications, silicon proven in a wide range of processes, readily available at your fingertips.</p>\r\n
              \r\n
              <p><strong>Risk reduction</strong></p>\r\n
              \r\n
              <p>Typical ICs designed in high voltage or BCD processes end up in harsh to very harsh environments, such as automotive or industrial applications. Robustness requirements reach far beyond merely ESD specifications. Sofics&rsquo; approach with PowerQubic is to anticipate as much as possible the interaction of specifications and protection structures against the myriad of electrical hazards &ndash; optimizing for overall robustness..</p>\r\n
              \r\n
              <p><strong>Proven portability</strong></p>\r\n
              \r\n
              <p>BCD processes are all very different, and portability for one process or process generation to the next can trigger the need for a series of test chips in order to investigate process properties during various disturbances. Sofics has developed work-arounds enabling ESD protection for high voltage pins, often without the need for a test chip. In one example, a product IC was protected up to 4kV HBM and 200V MM in an untested 0.18um BCD process. The holding voltage of the protection was designed and delivered at 28V, well above the required 24V.</p>
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              \r\n
              Designing ESD protection can be very costly: frequently many test structures are required  analysis needs to done IP positions need checked and respected&hellip;. Sofics has a wide range of solutions for applications silicon proven in processes. As an provider we distribute the design over different customers lowering everyone.\r\n
              \r\n
              Mask reduction\r\n
              \r\n
              Nowhere task selecting optimal minimal mask set is more challenging than BCD Often large variety options available. So far always succeeded creating using only masks available functional elements IC.\r\n
              \r\n
              Manufacturing reduction\r\n
              \r\n
              In one example customer had working product (an LCD driver) but consumed too much area. optimized diode size layout reduced I/O bus scheme area designed new power clamp worked out calculation sheet determine optimum placement. This resulted 25% reduction overall die 12% significantly cutting product&rsquo;s manufacturing cost. Since engagement been able make consistently smaller I/O&rsquo;s cells repetition rate. These enhancements lead hence cheaper dies. The rewarded with increased competitiveness bigger market share.\r\n
              \r\n
              Speed up time-to-market\r\n
              \r\n
              Designing time consuming: often at least run setting back IC couple months. processes readily your fingertips.\r\n
              \r\n
              Risk reduction\r\n
              \r\n
              Typical ICs high voltage or end harsh environments such as automotive industrial applications. Robustness requirements reach beyond merely specifications. Sofics&rsquo; approach PowerQubic anticipate possible interaction specifications against myriad electrical hazards &ndash; optimizing robustness..\r\n
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              Proven portability\r\n
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              BCD all portability process generation next trigger series chips order investigate properties during various disturbances. developed work-arounds enabling pins without chip. In was protected 4kV HBM 200V MM untested 0.18um process. holding delivered 28V well above 24V.
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              <p>PhyStar&reg;&nbsp;<strong>robust circuit and interface solutions</strong>, including custom digital I/O&rsquo;s, circuits that handle transient disturbances (e.g. to provide antenna clipping or POR), as well as automotive standard PHYs (e.g. a full LIN PHY with integrated ESD, EOS and EMC robustness).</p>\r\n
              \r\n
              <p><strong>Higher integration</strong></p>\r\n
              \r\n
              <p>Overall robustness and cost optimization can be driven further by a higher level of solution integration. Sofics&rsquo; design team is ready to enhance the functionality of IP blocks with diverse and/or aggressive ESD/EMC/EOS requirements. In one example, a set of I/O&rsquo;s with increased HBM performance (4 kV HBM) were created. This allowed the customer to focus on their core circuitry, while Sofics designed the pad ring, allowing a shorter design time for the overall product. The I/O library contained digital and several analog I/O&rsquo;s, including a high voltage pad &ndash; with tolerance for high positive and negative voltages (upto +-6V in a 2.5V domain). Also included was the power ESD power protection, busses and filler cells. The fact that Sofics could act as a one-stop-shop by delivering the entire robust pad ring removed much of the integration overhead, and lowered overall costs significantly.</p>\r\n
              \r\n
              <p><strong>Mask cost reduction</strong></p>\r\n
              \r\n
              <p>As in all Sofics&rsquo; solutions, we strive for a minimal mask set to meet all requirements. In one example, we delivered digital IO&rsquo;s for 1.8V-3.6V domain using 5V transistors &ndash; as was the customers request.</p>
              """
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