EEPROM IP
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205
IP
from 19 vendors
(1
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10)
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512bit EEPROM IP with configuration 16p2w16bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
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1Kbyte EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)
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1KByte EEPROM IP with configuration 66p16w8bit
- Global Foundries Embedded EEPROM 0.13 um
- 1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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2048bits EEPROM with configuration 16p8w16bit
- GlobalFoundries Embedded EEPROM 0.13 um
- 2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit
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Embedded EEPROM IP, 512x16 bits for 1.2V/5V BCD
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 512x16 bits for 1.2V/5V BCD
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 512x8 bits for 1.8V/5V BCDA
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 512x8 bits for 1.5V/5V BCD
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 512x8 bits for 5V BCD_EPI_ENH3
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 512x8 bits for 5V BCD_EPI_ENH3
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size