EEPROM IP for SMIC
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EEPROM IP
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19
EEPROM IP
for SMIC
from 3 vendors
(1
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10)
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512-bit EEPROM (NTLab)
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms
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Embedded EEPROM IP, 512x8 bits for 1.8V/5V BCDA
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 2Kx8 bits for 1.8V/3.3V Logic
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 128x8 bits for 1.8V/3.3V Logic
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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1Kbyte Embedded EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
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Embedded EEPROM IP, 32x16 bits for 1.8V/3.3V Logic
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
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Embedded EEPROM IP, 1Kx8 bits for 1.8V/3.3V Logic
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
-
1Kbyte EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)
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1024-bit EEPROM IP with configuration 32p2w16bit
- SMIC EEPROM CMOS 0.18 um
- 1024-bite of available memory 16(bit per word) x 2(words per page) x 32(pages) bit
- High density of memory cells
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512-bit EEPROM with configuration 16p1w32bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse