Silicon on Nothing: the Origins of FD-SOI
October 19, 2016
Yesterday, I wrote about the new 12FDX process, which is a derivative of the original 28nm FD-SOI process developed by ST Microelectronics. Last year I talked to Thomas Skotnicki. He is the father of thin-box FD-SOI and its birth is an interesting story. The story began 27 years ago.
To read the full article, click here
Related Blogs
- FiRa 3.0 Use Cases: Expanding the Future of UWB Technology
- From DIY To Advanced NoC Solutions: The Future Of MCU Design
- Guarding against the threat of clock attacks with analog IP
- Arm Compute Platform at the Heart of Malaysia’s Silicon Vision
Latest Blogs
- CAVP-Validated Post-Quantum Cryptography
- The role of AI processor architecture in power consumption efficiency
- Evaluating the Side Channel Security of Post-Quantum Hardware IP
- A Golden Source As The Single Source Of Truth In HSI
- ONFI 5.2: What’s new in Open NAND Flash Interface's latest 5.2 standard