Did Intel Fall For A Techno-Ponzi Scheme?
Did Intel management fall for that decades old Techno-Ponzi scheme – phase change memory.
A hilarious piece in Semiaccurate points out that on launch in July 2015 the claim for 3D XPoint was: 1000x faster than NAND, 1000x the endurance of NAND, and 10x denser than DRAM.
To read the full article, click here
Related Semiconductor IP
- LPDDR6/5X/5 PHY V2 - Intel 18A-P
- ML-KEM Key Encapsulation & ML-DSA Digital Signature Engine
- MIPI SoundWire I3S Peripheral IP
- ML-DSA Digital Signature Engine
- P1619 / 802.1ae (MACSec) GCM/XTS/CBC-AES Core
Related Blogs
- Why Intel 14nm is NOT a Game Changer!
- SSD Interfaces and Performance Effects
- What’s on the Horizon for NAND and DRAM?
- DDR3/DDR2 price crossover reached
Latest Blogs
- Why What Where DIFI and the new version 1.3
- ML-DSA explained: Quantum-Safe digital Signatures for secure embedded Systems
- Efficiency Defines The Future Of Data Movement
- Why Standard-Cell Architecture Matters for Adaptable ASIC Designs
- ML-KEM explained: Quantum-safe Key Exchange for secure embedded Hardware