FD-SOI: GlobalFoundries 22nm Update
As I said yesterday, last week was the GSA Analog/Mixed-Signal working group completely dedicated to FD-SOI. ST went first and had a presentation that was a mixture of an introduction to FD-SOI that I have covered times that are too numerous to mention.
Then they did a dive into analog and RF capabilities for FD-SOI that went very deep into two test projects, deeper than I could follow in detail (my PhD is in software not RF design). But the key is in the picture above. The pictures on the right show how back-biasing is actually applied. You apply a positive voltage to the back of the N transistors and a negative one to the back of the P. The graph on the left shows the result. The tiny red line shows how substrate bias works in a bulk process: you can only do a little and it isn't very effective. The blue line is what you can get with FD-SOI biasing. Actually, since biasing can go to 3V I believe you can do even more.
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