Always-On IoT - FDSOI's Always Better? What About Wafers? (Questions from Shanghai)
Mahesh Tirupattur, EVP at low-power SERDES pioneer Analog Bits lead off the panel discussion at the recent FD-SOI Forum in Shanghai with the assertion that for anything “always on” in IoT, FD-SOI’s always better. They had a great experience porting their SERDES IP to 28nm FD-SOI (which they detailed last spring – see the ppt here). The port from 28 bulk to 28 FDSOI took 2 1/2 months (vs. to FinFET, which took almost 6). Even without using body bias, they got performance up by around 15% and leakage down by about 30% (he added that with body bias, they could get five times that).
He compared porting to FD-SOI to playing high school ball, vs. a port to FinFET which is like competing in the Olympics. ESD was different, but not a big deal – you just need to “read the manual”. Heating? Nothing an engineer can’t resolve. For IoT, FinFETs are like using a cannon to shoot a mosquito, he quipped.
To read the full article, click here
Related Semiconductor IP
- RVA23, Multi-cluster, Hypervisor and Android
- 64 bit RISC-V Multicore Processor with 2048-bit VLEN and AMM
- NPU IP Core for Mobile
- RISC-V AI Acceleration Platform - Scalable, standards-aligned soft chiplet IP
- H.264 Decoder
Related Blogs
- How to Design to the "Always-on" IoT Imperative
- Lowering Energy Consumption in Always-on IoT Designs
- ST To Run 28nm FD-SOI NovaThor Next Week
- Can "Less than Moore" FDSOI provides better ROI for Mobile IC?
Latest Blogs
- How fast a GPU do you need for your user interface?
- PCIe 6.x and 112 Gbps Ethernet: Synopsys and TeraSignal Achieve Optical Interconnect Breakthroughs
- Powering the Future of RF: Falcomm and GlobalFoundries at IMS 2025
- The Coming NPU Population Collapse
- Driving the Future of High-Speed Computing with PCIe 7.0 Innovation